BDW64 Datasheet, PDF (2/5 Pages) Power Innovations Ltd – PNP SILICON POWER DARLINGTONS

BDW64, BDW64A, BDW64B, BDW64C, BDW64D
PNP SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V_{(BR)CEO breakdown voltage}
I_C = -30 mA I_B = 0
I_CEO
Collector-emitter
cut-off current
I_CBO
Collector cut-off
current
I_EBO
h_FE
V_BE(on)
V_CE(sat)
V_EC
Emitter cut-off
current
Forward current
transfer ratio
Base-emitter
voltage
Collector-emitter
saturation voltage
Parallel diode
forward voltage
V_CE = -30 V
V_CE = -30 V
V_CE = -40 V
V_CE = -50 V
V_CE = -60 V
V_CB = -45 V
V_CB = -60 V
V_CB = -80 V
V_CB = -100 V
V_CB = -120 V
V_CB = -45 V
V_CB = -60 V
V_CB = -80 V
V_CB = -100 V
V_CB = -120 V
V_EB = -5 V
V_CE = -3 V
V_CE = -3 V
V_CE = -3 V
I_B = -12 mA
I_B = -60 mA
I_E = -6 A
I_B = 0
I_B = 0
I_B = 0
I_B = 0
I_B = 0
I_E = 0
I_E = 0
I_E = 0
I_E = 0
I_E = 0
I_E = 0
I_E = 0
I_E = 0
I_E = 0
I_E = 0
I_C = 0
I_C = -2 A
I_C = -6 A
I_C = -2 A
I_C = -2 A
I_C = -6 A
I_B = 0
(see Note 5)
T_C = 150°C
T_C = 150°C
T_C = 150°C
T_C = 150°C
T_C = 150°C
BDW64
BDW64A
BDW64B
BDW64C
BDW64D
BDW64
BDW64A
BDW64B
BDW64C
BDW64D
BDW64
BDW64A
BDW64B
BDW64C
BDW64D
BDW64
BDW64A
BDW64B
BDW64C
BDW64D
-45
-60
-80
-100
-120
750
(see Notes 5 and 6)
100
(see Notes 5 and 6)
(see Notes 5 and 6)
-0.5
-0.5
-0.5
-0.5
-0.5
-0.2
-0.2
-0.2
-0.2
-0.2
-5
-5
-5
-5
-5
-2
20000
-2.5
-2.5
-4
-3.5
NOTES: 5. These parameters must be measured using pulse techniques, t_p = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
V
thermal characteristics
R_θJC
R_θJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
2.08 °C/W
62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS ^†
t_on Turn-on time
t_off
Turn-off time
I_C = -3 A
V_BE(off) = 4.5 V
I_B(on) = -12 mA
R_L = 10 Ω
I_B(off) = 12 mA
t_p = 20 µs, dc ≤ 2%
† _{Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.}
MIN TYP MAX UNIT
1
µs
5
µs
PRODUCT INFORMATION
2
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.