BDV64-S Datasheet, PDF (2/4 Pages) Bourns Electronic Solutions – PNP SILICON POWER DARLINGTONS

BDV64, BDV64A, BDV64B, BDV64C
PNP SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
BDV64
-60
Collector-emitter
V_{(BR)CEO breakdown voltage}
I_C = -30 mA I_B = 0
(see Note 4)
BDV64A
BDV64B
-80
-100
BDV64C
-120
V_CB = -30 V I_B = 0
BDV64
-2
I_CEO
Collector-emitter
cut-off current
V_CB = -40 V
V_CB = -50 V
I_B = 0
I_B = 0
BDV64A
-2
BDV64B
-2
V_CB = -60 V I_B = 0
BDV64C
-2
V_CB = -60 V I_E = 0
BDV64
-0.4
V_CB = -80 V I_E = 0
BDV64A
-0.4
V_CB = -100 V I_E = 0
BDV64B
-0.4
I_CBO
Collector cut-off
current
V_CB = -120 V
V_CB = -30 V
I_E = 0
I_E = 0
T_C = 150°C
BDV64C
BDV64
-0.4
-2
V_CB = -40 V I_E = 0
T_C = 150°C
BDV64A
-2
V_CB = -50 V I_E = 0
T_C = 150°C
BDV64B
-2
V_CB = -60 V I_E = 0
T_C = 150°C
BDV64C
-2
Emitter cut-off
OBSOLETE ^IEBO
h_FE
V_CE(sat)
V_BE
V_EC
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
forward voltage
V_EB = -5 V I_C = 0
V_CE = -4 V I_C = -5 A
I_B = -20 mA I_C = -5 A
V_CE = -4 V I_C = -5 A
I_E = -10 A I_B = 0
(see Notes 4 and 5)
(see Notes 4 and 5)
(see Notes 4 and 5)
(see Notes 4 and 5)
-5
1000
-2
-2.5
-3.5
NOTES: 4. These parameters must be measured using pulse techniques, t_p = 300 µs, duty cycle ≤ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
MIN TYP MAX
R_θJC Junction to case thermal resistance
1
R_θJA Junction to free air thermal resistance
35.7
UNIT
V
mA
mA
mA
V
V
V
UNIT
°C/W
°C/W
PRODUCT INFORMATION
2
JUNE 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.