TISP8250D_08 Datasheet, PDF (1/4 Pages) Bourns Electronic Solutions – UNIDIRECTIONAL P-GATE THYRISTOR OVERVOLTAGE AND OVERCURRENT PROTECTOR

TISP8250D
UNIDIRECTIONAL P-GATE THYRISTOR
OVERVOLTAGE AND OVERCURRENT PROTECTOR
TISP8250D Overvoltage and Overcurrent Protector
Telecommunication System 30 A 10/1000 Protector
Ion-Implanted Breakdown Region
- Precise and Stable Voltage
Device Name
TISP8250D
V_DRM
V
250
V_(BO)
V
340
Rated for International Surge Wave Shapes
Wave Shape
2/10
0.5/700
10/700
10/1000
Standard
GR-1089-CORE
CNET I 31-24
ITU-T K.20/21
GR-1089-CORE
I_PPSM
A
75
40
40
30
8-SOIC Package (Top View)
G1
8A
NC 2
7A
NC 3
6A
K4
5A
MD8XAAA
NC - No internal connection
Device Symbol
A
Functional Replacement for TPP25011
.............................................. UL Recognized Component
G
SD8X AA
K
Description
The TISP8250D is a P-gate reverse-blocking thyristor (SCR) designed for the protection of telecommunications equipment against
overvoltages and overcurrents on the telephone line caused by lightning, a.c. power contact and induction. The fixed voltage and current
triggered modes make the TISP8250D particularly suitable for the protection of ungrounded customer premise equipment. Connected
across the d.c. side of a telephone set polarity bridge, in fixed voltage mode these devices can protect the ringer in the on-hook condition.
In an off-hook condition, either the fixed voltage or current triggered modes can protect the following telephone electronics.
Without external gate activation, the TISP8250D is a fixed voltage protector. The maximum working voltage without clipping is 250 V and
the protection voltage is 340 V. Lower values of protection voltage may be set by connecting an avalanche breakdown diode of less than
250 V between the TISP8250D gate and anode (see Figure 2.)
By connecting a small value resistor in series with the line conductor and connecting the TISP8250D gate cathode terminals in parallel with
the resistor, conductor overcurrents can gate trigger the TISP8250D into conduction.
Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar
into a low-voltage on state. Overcurrents develop sufficient voltage across the external gate-cathode resistor to trigger the device into a
low-voltage on state. This low-voltage on state causes the current resulting from the overstress to be safely diverted through the device.
The high crowbar holding current helps prevent d.c. latchup as the diverted current subsides.
How To Order
Device
TISP8250D
Package
8-SOIC
Carrier
Embossed Tape Reeled
Order As
TISP8250DR-S
Marking
Code
8250
Standard
Quantity
2500
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
JULY 2000 - REVISED JULY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.