TISP4G024L1WR-S Datasheet, PDF (1/10 Pages) Bourns Electronic Solutions – G.Fast VDSL Protector

*RoHS ^COMPLIANT
Features
■ Low capacitance
■ Low distortion
■ Surge protection
■ RoHS compliant*
Applications
■ G.Fast equipment
■ xDSL modems and line cards
TISP4G024L1W G.Fast VDSL Protector
General Information
This device is designed to protect ADSL, VDSL and G.Fast line driver interfaces from
overvoltages up to rated limits. Overvoltages are normally caused by a.c. power-system
or lightning-flash disturbances which are induced or conducted onto the telephone line.
I/O 1
REF
This protector offers protection of both lines of the twisted wire pair in a single device.
When placed between the xDSL line driver IC and the transformer, this protector will
clamp and switch into a low-impedance state, safely diverting the current transferred by
GND
REF
the xDSL coupling transformer. The biased low capacitance design makes this device
suitable for designs from ADSL to 30MHz VDSL2 to G.Fast.
Telecom ports need protection against longitudinal and transverse surges, to comply
I/O 2
REF
with international standards such as ITU-T K.20, K.21 or K.45, Telcordia GR-1089-CORE
and YD/T. Longitudinal surges are resisted by the galvanic isolation of the coupling
transformer which is commonly rated to 2 kV or greater. Transverse surges can be
transmitted by the transformer, and can stress the Line Driver Interface IC. As the xDSL interface circuit is designed to operate from
3 kHz to 106 MHz, nearby high frequency events – such as cable flashover or primary protection activation – can generate damaging
conditions for the interface requiring this type of protection.
Absolute Maximum Ratings, T_A = 25 °C (Unless Otherwise Noted)
Rating
Repetitive Peak Off-State Voltage
Non-repetitive Peak Impulse Current, 8/20 µs
ESD (IEC 61000-4-2 Contact)
ESD (IEC 61000-4-2 Air)
Junction Temperature
Storage Temperature
Symbol
Rating
Unit
VDRM
24
V
IPPSM
30
A
8
kV
15
kV
TJ
-40 to +150
°C
TSTG
-55 to +150
°C
Electrical Characteristics, T_A = 25 °C (Unless Otherwise Noted)
Parameter
Test Condition (Note 1)
Min.
Typ.
Max.
Unit
I_D Leakage Current
V_(BO) Breakover Voltage
I_{(BO) Breakover Current}
V_T On-state Voltage
V_T On-state Voltage
IH Holding Current
C Capacitance
ΔC Capacitance Variation
V_D = V_DRM
di/dt = ±1 mA/µs
di/dt = ±1 mA/µs
I_T = ±1 A
I_T = 1 A, REF to GND
I_T = ±5 A di/dt = 1 mA/µs
V_D = 2 V, f = 10 MHz, Vd =1 Vrms
V_D = 1 V to V_DRM, f = 10 MHz, Vd =1 Vrms
100
nA
30
34
V
80
mA
3.8
V
1
V
40
mA
0.4
3
pF
0.02
pF
Note 1: All measurements made between I/O 1 and I/O 2 unless otherwise stated.
OCTOBER 2015
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.