TISP4011H1BJ Datasheet, PDF (1/2 Pages) –

*RoHS ^COMPLIANT
TISP4011H1BJ
VERY LOW VOLTAGE
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
LEAD ^FREE
TISP4011H1BJ VLV Overvoltage Protector Series
General Information
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on-state causes the current resulting from the overvoltage to be
safely diverted through the device. The device switches off when the
diverted current falls below the holding current value.
SMB Package (Top View)
R(B) 1
Device Symbol
T
2 T(A)
MDXXBGE
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating
Repetitive peak off-state voltage
Non-repetitive peak on-state pulse current
10/1000 µs
2/10 µs
Junction temperature
Storage temperature
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
Parameter
ID _{Leakage current}
V(BO)
I(BO)
VT
IH
Coff
Breakover voltage
Breakover current
On-state voltage
Holding current
Off-state capacitance
Test Conditions
VD = VDRM
di/dt = ±1 mA/µs
di/dt = ±1 mA/µs
IT = ±5 A
IT = ±5 A, di/dt = ±1 mA/µs
Vd = 0 V, f = 1 MHz, 1 Vrms
SD4XAA
R
Terminals T and R correspond to the
alternative line designators of A and B
Symbol
Value
Unit
VDRM
±5.25
V
IPPSM
±100
A
±500
TJ
-40 to +150
°C
Tstg
-55 to +150
°C
Min. Typ. Max. Unit
1
200
µA
9
10.5
V
75
200
mA
3
V
20
60
mA
110
pF
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
OCTOBER 2016
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.