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TIC246 Datasheet, PDF (1/3 Pages) Power Innovations Ltd – SILICON TRIACS
TIC246 SERIES
SILICON TRIACS
High Current Triacs
16 A RMS
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
125 A Peak Current
Max IGT of 50 mA (Quadrants 1 - 3)
This series is currently available,
but not recommended for new
designs.
MT1
MT2
G
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDC2ACA
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
TIC246D
Repetitive peak off-state voltage (see Note 1)
TIC246M
TIC246S
TIC246N
Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2)
Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3)
Peak gate current
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
SYMBOL
VDRM
IT(RMS)
ITSM
IGM
TC
Tstg
TL
VALUE
400
600
700
800
16
125
±1
-40 to +110
-40 to +125
230
UNIT
V
A
A
A
°C
°C
°C
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at
the rate of 400 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
electrical characteristics at 25°C case temperature (unless otherwise noted )
IDRM
PARAMETER
Repetitive peak
off-state current
IGT
Gate trigger
current
VGT
Gate trigger
voltage
VT
On-state voltage
VD = rated VDRM
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
ITM = ±22.5 A
TEST CONDITIONS
IG = 0
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
IG = 50mA
TC = 110°C
tp(g) > 20 μs
tp(g) > 20 μs
tp(g) > 20 μs
tp(g) > 20 μs
tp(g) > 20 μs
tp(g) > 20 μs
tp(g) > 20 μs
tp(g) > 20 μs
(see Note 4)
MIN TYP MAX UNIT
±2
mA
12
50
-19 -50
-16 -50
mA
34
0.8
2
-0.8
-2
-0.8
-2
V
0.9
2
±1.4 ±1.7
V
† All voltages are with respect to Main Terminal 1.
NOTE 4: This parameter must be measured using pulse techniques, tp = ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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