PT66011 Datasheet, PDF (1/1 Pages) Bourns Electronic Solutions – ISDN S-Interface Transformer Module

*RoHS ^{VCEOARMVSAPIOILLINAASBNLTE}
PXTX6Y6Y011A
Features
■ Through-hole unit
■ Isolation voltage of 20000 Vrms
■ Low interwinding capacity
■ Lead free version available (see How to
Order)
■ Lead free versions are RoHS compliant*
Applications
■ Telecom
PT66011A - ISDN S-Interface Transformer Module
Electrical Specifications @ 25 °C
Turns Ratio ±1 % (III+IV:I+II)
......................................see schematic
Impedance at 20 kHz 100 mV
with IDC=3.6 mA (core 1,2)
ohm min..........................................625
OCL at 10 kHz 100 mV(mH min)
Transformer I+II (core1,2)..................22
Choke V,VI,VII, VIII +50/-30 % ............5
Interwinding Capacity (10 kHz 100 mV)
Cww (pF max) (core 1,2) ................150
Leakage Inductance (10 kHz 100 mV)
Ls (uH)
Ls I+II (III+IV shorted) core 1,2 ......<0.6
Ls V( IV,VI,VII shorted) core 3........< 0.6
HIPOT 50 Hz for 2 sec. (Vrms)
I/II (core 1+2) to III/IV (core 1+2) ..2000
V/VI (core 3) to III/IV (core 1) to
VII+VIII (core 3) + III/IV (core 2) ......500
DCR III=IV (ohm Max) ........................2.65
DCR I+II (ohm max) ............................1.4
DCR V,VI,VII, VIII (ohm max) ................1.1
Operating Temperature (°C) ........0 to +70
Other OCL specifications available on
request.
Packaging Specifications
Tube ....................................15 pcs./tube
Product Dimensions
3.50 ± 0.50
(0.138 ± 0.020)
0.50
(0.020)
1.0
(0.040)
1.50
(0.059)
15.1 _MAX.
(0.594)
10.5
(0.413)
18
1
Electrical Schematic
core 1
2
V
9
1
III
I
8
3
IV
II
VI
7
18
n = 2/2:1/1
17
core 2
4
VII
10
5
III
I
11
16
IV
II
VIII
12
14
n = 2/2:1/1
15
core 3
n = 1:1:1:1
How to Order
Model
Termination Coating
Blank = Tin-lead
L = 100 % Tin
PT66011A __
8X
2.54
(0.010)
(12.91.416)MAX.
10
9
8.89
(0.35)
BOTTOM VIEW
DIMENSIONS ARE:
MM
(INCHES)
TOLERANCE: ± ^0.2
(.008)
01/06
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.