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P500-G Datasheet, PDF (1/7 Pages) Bourns Electronic Solutions – Extremely high speed performance
*RoHS COMPLIANT
Features
■ Formerly
brand
■ Extremely high speed performance
■ Blocks high voltages and currents
■ Two TBU™ protectors in one small package
■ Simple, superior circuit protection
■ Minimal PCB area
■ RoHS compliant*, UL Recognized
Applications
■ POTS linecards
■ VolP equipment
■ Voice and data combo linecards
■ ONU, ONT
■ Gateways
■ Cable and DSL modems
TBU™ P500-G and P850-G Protectors
Transient Blocking Units - TBU™ Devices
Bourns® Model P500-G and P850-G
TBU™ products are high speed, surge
protection components designed to
protect Subscriber Line Interface Circuits
(SLICs) against transients caused by
AC power cross, induction and lightning
surges.
The TBU™ device blocks surges and
provides an effective barrier behind
which sensitive electronics are not
exposed to large voltages or currents
during surge events.
Agency Approval
UL recognized component File # E315805.
Industry Standards
Telcordia
ITU-T
Description
GR-1089
Port Type 2, 4
Port Type 3, 5
K.20, K.20E, K.21, K.21E, K.45
Model
P500-G
P850-G
P850-G
Absolute Maximum Ratings (Tamb = 25 °C)
Symbol
Vimp
Vrms
Top
Tstg
Parameter
Maximum protection voltage for impulse faults with rise time ≥ 1 µsec
Maximum protection voltage for continuous Vrms faults
Operating temperature range
Storage temperature range
P500-Gxxx-WH
P850-Gxxx-WH
P500-Gxxx-WH
P850-Gxxx-WH
Electrical Characteristics (Tamb = 25 °C)
Symbol Parameter
P500-G120-WH
Iop
Maximum current through the device that will not cause
current blocking
P500-G200-WH
P850-G120-WH
P850-G200-WH
Itrigger
Typical current for the device to go from normal operating
state to protected state
P500-G120-WH
P500-G200-WH
P850-G120-WH
P850-G200-WH
Iout
Maximum current through the device
P500-G120-WH
P500-G200-WH
P850-G120-WH
P850-G200-WH
RTBU
Rbal
tblock
Series resistance of the TBU™ device
Line-to line series resistance difference between two TBU™ devices
Maximum time for the device to go from normal operating
state to protected state
Iquiescent
Current through the triggered TBU™ device with 50 Vdc circuit
voltage
Vreset
Voltage below which the triggered TBU™ device will transition to
normal operating state
The P-G series TBU™ devices are bidirectional; specifications are valid in both directions.
Min.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications
Value
Unit
500
850
V
300
425
V
-40 to +85
°C
-65 to +150
°C
Typ.
Max.
Unit
100
200
100
mA
200
150
275
150
mA
275
200
400
200
mA
400
50
55
Ω
2
Ω
1
µs
0.7
mA
22
V