P40-G Datasheet, PDF (1/7 Pages) Bourns Electronic Solutions – Extremely high speed performance

*RoHS ^COMPLIANT
Features
■ Formerly
brand
■ Extremely high speed performance
■ Low impedance
■ Two TBU^™ protectors in one small package
■ Very high bandwidth, GHz compatible
■ Simple, superior circuit protection
■ RoHS compliant*, UL Recognized
TBU^™ P40-G Protectors
Applications
■ xDSL (ADSL, VDSL, VDSL2)
■ High Data Rate Interface IC protection
(LVDS, HDMI, etc.)
■ Industrial sensors and controls
■ General electronics
Transient Blocking Units - TBU^™ Devices
Bourns^® Model P40-G products are high speed bidirectional
protection components, constructed using MOSFET semicon-
ductor technology, designed to protect against faults caused
by short circuits, AC power cross, induction and lightning
surges.
The TBU™ high speed protector, triggering as a function of
the MOSFET, blocks surges and provides an effective barrier
behind which sensitive electronics are not exposed to large
voltages or currents during surge events. The TBU™ device is
provided in a surface mount DFN package and meets industry
standard requirements such as RoHS and Pb Free solder
reflow profiles.
Agency Approval
UL recognized component File # E315805.
Industry Standards
Telcordia
ITU-T
Description
GR-1089
K.20, K.20E, K.21, K.21E, K.45
Absolute Maximum Ratings (T_amb = 25 °C)
Symbol
V_imp
V_rms
T_op
T_stg
Parameter
Maximum protection voltage for impulse faults with rise time ≥ 1 µsec
Maximum protection voltage for continuous V_rms faults
Operating temperature range
Storage temperature range
Value
40
28
-40 to +85
-65 to +150
Model
P40-G
Unit
V
V
°C
°C
Electrical Characteristics (T_amb = 25 °C)
Symbol Parameter
Min.
Typ.
Max.
Unit
I_op
I_trigger
Maximum current through the device that will not cause current blocking
Typical current for the device to go from normal operating state to protected
state
240
mA
350
mA
I_out
R_TBU
R_bal
t_block
Maximum current through the device
Series resistance of the TBU^™ device
Line-to line series resistance difference between two TBU^™ devices
Maximum time for the device to go from normal operating state to protected
state
480
mA
3.6
4.2
Ω
5
%
0.2
µs
I_quiescent Current through the triggered TBU^™ device with 40 Vdc circuit voltage
0.7
mA
V_reset
Voltage below which the triggered TBU^™ device will transition to normal oper-
ating state
7
V
The P40-G Series TBU^™ device is bidirectional; specifications are valid in both directions.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.