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CDNBS08-T03C_12 Datasheet, PDF (1/4 Pages) Bourns Electronic Solutions – TVS Diode Array Series
*RoHS COMPLIANT
Features
■ RoHS compliant*
■ Protects four lines
■ Unidirectional and bidirectional
configurations
■ ESD protection: 30 kV max.
Applications
■ Audio/video inputs
■ RS-232, RS-422 and RS-423 data lines
■ Portable electronics
■ Medical sensors
CDNBS08-T03~T36C - TVS Diode Array Series
General Information
The markets of portable communications, computing and video equipment are
challenging the semiconductor industry to develop increasingly smaller electronic
components.
Bourns offers Steering Diode/Transient Voltage Suppressor Array diodes for surge and
ESD protection applications in an eight lead narrow body SOIC package size format.
TheTransient Voltage Suppressor Array series offer a choice of voltage types ranging
from 3 V to 36 V in unidirectional and bidirectional configurations. Bourns® Chip Diodes
conform to JEDEC standards, are easy to handle on standard pick and place
equipment and their flat configuration minimizes roll away.
The Bourns® device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and
IEC 61000-4-5 (Surge) requirements.
8
7
6
5
1
2
3
4
8
7
6
5
Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
Max.
Unit
Operating Temperature
TJ
-55 to +150
°C
Storage Temperature
TSTG
-55 to +150
°C
1
2
3
4
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Min. Breakdown Voltage @ 1 mA
Working Peak Voltage
Max. Clamping Voltage
VC @ IP = 1 A 1
Typ. Clamping Voltage
@ 8/20 µs VC @ IPP 1
Max. Leakage Current @ VWM
Max. Cap. Bidirectional @ 0 V,
1 MHz
ESD Protection per IEC 61000-4-2
Contact - Min.
Contact - Max.
Air - Min.
Air - Max.
Peak Pulse Power (tp = 8/20 µs) 2
Forward Voltage @ 100 mA,
300 µs - Square Wave 3
CDNBS08-
Symbol Uni- Bi- Uni- Bi- Uni- Bi- Uni- Bi- Uni- Bi- Uni- Bi- Uni- Bi- Unit
T03 T03C T05 T05C T08 T08C T12 T12C T15 T15C T24 T24C T36 T36C
VBR
3.3
6.0
8.5
13.3
16.7
26.7
40.0
V
VWM
3.0
5.0
8.0
12.0
15.0
24.0
36.0
V
VC
8.0
9.8
13.4
19.0
24.0
43.0
51.0
V
VC
10.9 V
@ 43 A
13.5 V
@ 42 A
16.9 V
@ 34 A
25.9 V
@ 21 A
30.0 V
@ 17 A
49.0 V
@ 12 A
76.8 V
@9A
V
ID
125
20
10
1
1
1
1
µA
CJ(SD)
450
308
300
105
80
50
45
pF
ESD
PPP
VF
±8
±30
±15
kV
±30
500
W
1.5
V
Notes:
1. See Pulse Wave Form.
2. See Peak Pulse Power vs. Pulse Time.
3. Only applies to unidirectional devices.
4. Part numbers with a “C” suffix are bidirectional devices, i.e. CDNBS08-T03C.
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.