CDNBS08-SLVU2.8-8 Datasheet, PDF (1/4 Pages) Bourns Electronic Solutions – CDNBS08-SLVU2.8-8 - Low Capacitance TVS Array

*RoHS ^COMPLIANT
Features
■ Lead free device (RoHS compliant*)
■ Protects up to 4 I/O ports
■ Bidirectional configuration
■ ESD protection
■ Low capacitance 6 pF
Applications
■ Ethernet – 10/100/1000 Base T
■ Personal digital assistant
■ Handheld electronics
■ Cellular phones
■ Video cards
CDNBS08-SLVU2.8-8 – Low Capacitance TVS Array
General Information
The markets of portable communications, computing and video equipment are
challenging the semiconductor industry to develop increasingly smaller electronic
8
components.
Bourns offers Transient Voltage Suppressor Array combination diodes for surge and
ESD protection applications in an 8 Lead Narrow Body SOIC package size format.
Bourns Chip Diodes conform to JEDEC standards, are easy to handle on standard
pick and place equipment and their flat configuration minimizes roll away.
The Bourns® device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC
61000-4-5 (Surge) requirements.
1
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
Min.
Peak Pulse Current (tp = 8/20 µs)
I PP
Peak Pulse Power (tp = 8/20 µs)¹
PPP
Working Voltage
VWM
Breakdown Voltage @ 1 mA
VBR
3.0
Leakage Current @ VWM
ID
Capacitance @ 0 V, 1 MHz
C
Snapback Voltage
2.8
@ IPP = 2 A
VC
@ IPP = 5 A
VC
Clamping Voltage
@ IPP = 24 A
VC
@ IPP = 30 A
VC
Note:
1. See Peak Pulse Power vs. Pulse Time.
Nom.
30
600
6
Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
Min.
Operating Temperature
TJ
-55
Storage Temperature
TSTG
-55
Nom.
+25
+25
7
6
2
3
Max.
2.8
1.0
5.5
8.5
15
17
Max.
+150
+150
5
4
Unit
A
W
V
V
µA
pF
V
V
V
V
V
Unit
°C
°C
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.