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CDNBS08-PLC03-3.3_09 Datasheet, PDF (1/4 Pages) Bourns Electronic Solutions – Steering Diode/TVS Array Combo
*RoHS COMPLIANT
Features
■ Lead free device (RoHS compliant*)
■ Telcordia GR1089 (Intra-Building)
■ Protects 2 lines
■ ESD protection >40 kV
■ Low capacitance 8 pF
Applications
■ T1/E1 line cards
■ ISDN U-Interface and S/T Interface
■ xDSL
■ Ethernet – 10/100 Base T
CDNBS08-PLC03-3.3 Steering Diode/TVS Array Combo
General Information
The markets of portable communications, computing and video equipment are
challenging the semiconductor industry to develop increasingly smaller electronic
components.
Bourns offers Steering Diode/Transient Voltage Suppressor Array combination diodes
for surge and ESD protection applications in an 8 Lead Narrow Body SOIC package
size format.
The Bourns® device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC
61000-4-5 (Surge) requirements.
8
7
1
2
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Capacitance @ 0 V 1 MHz1
Capacitance @ 0 V 1 MHz2
Working Peak Voltage
Min. Breakdown Voltage @ 1 mA
Clamping Voltage @ 8/20 µs @ IPP = 100 A 3, 4
Clamping Voltage @ 8/20 µs @ IP = 50 A, Line - Ground
Max. Leakage Current @ VWM
ESD Protection: IEC 61000-4-2
Contact Discharge
Air Discharge
Peak Pulse Power (tp = 8/20 µs)5
EFT Protection: IEC61000-4-4 @ 5/50 ns
Surge Protection: IEC61000-4-5 @ 8/20 µs
L4 (Line-Gnd)
L4 (Line-Line) , L1 (Power)
Surge Protection: Telcordia GR1089
(Intra-Building) @ 2/10 µs
Symbol
C j(SD)
C j(SD)
VWM
VBR
VF
VF
ID
PPP
Min.
3.3
±8
±15
40
94
48
100
Nom.
20
8
Notes:
1. Measured between I/O pins and ground (pin 1 or 2).
2. Measured between I/O pins (pins 1 to 4).
3. See Pulse Wave Form. For an 8/20 µs waveform, apply positive pulse to pin 1 to 8 to pin 2 or 3 (ground).
4. Measured between pin 1 or 8 to pin 2 or 3; pin 1 or 8 to pin 4 or 5.
5. See Peak Pulse Power vs. Pulse Time.
6
5
3
4
Max.
Unit
25
pF
12
pF
3.0
V
V
18
V
11
V
2
µA
kV
kV
1800
W
A
A
A
A
Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
Junction Temperature Range
TJ
Storage Temperature Range
TSTG
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Min.
-55
-55
Nom.
+25
+25
Max.
Unit
+150
°C
+150
°C