CDDFN10-0516P Datasheet, PDF (1/6 Pages) Bourns Electronic Solutions – Surface Mount TVS Diode Array

*RoHS ^COMPLIANT
Features
n RoHS compliant*
n Low capacitance - 0.02 pF (I/O to I/O)
nESD protection to IEC 61000-4-2 (Level 4)
Applications
n USB 3.1
n USB 3.0
LEAD ^FREE
CDDFN10-0516P - Surface Mount TVS Diode Array
General Information
TsTl3inp.hh3eeeeseVTC,dro(DatdfwfDnaeostFraiseNlinpnW1eot0osrV-t)r0soka,5litnnm1agd6gePeP2e.teSd2inaeugVkvpipIRc(EfreeoeCvuspers6rorol1sivnr0eiead0Vsre0r)os-a4clytE-oa,2_LSm_{VgpEREAo(eDRrDpHLoSsSFIaeOtR}p_CeNoE_tOvrSi^EM_{cbfoeAPtRl5tlLiee}^E_nIA4VcNgwTt)^*iui(otrohpennqUtefouoSilrrsiBnehixemi3g)de,.h1an-.ttas.
2
5V
3.3 V
2.2 V
1
10
4
5
6
7
The DFN10 packaged device has an ultra-low typical capacitance
of only 0.02 pF between I/O lines. This allows it to be used for
9
protecting sensitive components used on high-speed interfaces.
The small footprint of the device allows for flow-through routing
on the PCB, helping to maintain matched impedances of the
high-speed data lines.
Absolute Maximum Ratings (@ T_A = 25 °C Unless Otherwise Noted)
Parameter
Peak Pulse Current (t_p = 8/20 μS) ⁽¹⁾
ESD (per IEC 61000-4-2 Contact)
ESD (per IEC 61000-4-2 Air)
Operating Temperature
Storage Temperature
Symbol
I_pp
TJ
T_STG
Electrical Characteristics (@ T_A = 25 °C Unless Otherwise Noted)
Pin 2 (V_BUS) to Ground
Parameter
Symbol
Working Peak Reverse Voltage
V_{WM_BUS}
Breakdown Voltage @ 1 mA
V_{BR_BUS}
Snap-back Voltage @ 50 mA
V_{SB_BUS}
Leakage Current @ V_{WM_BUS}
I_{R_BUS}
Clamping Voltage @ I_PP = 4 A
V_{C_BUS}
Channel Capacitance @ 0 V, 1 MHz
C_{IN_BUS}
Pin 1 or 10 (D+, D-) to Ground (Unless Otherwise Noted)
Parameter
Symbol
Working Peak Reverse Voltage
Breakdown Voltage @ 1 mA
Snap-back Voltage @ 50 mA
Leakage Current @ V_{WM_USB}
Forward Voltage @ 15 mA
Clamping Voltage @ I_PP = 4 A
Channel Capacitance @ 1.65 V, 1 MHz
Channel to Channel Capacitance
@ 1.65 V, 1 MHz ^{(2) (3)}
V_{WM_USB}
V_{BR_USB}
V_{SB_USB}
I_{R_USB}
V_{F_USB}
V_{C_USB}
C_{IN_USB}
C_{CROSS_USB}
Min.
6
5.5
Min.
4.5
3.6
Note 1: Pin 2 (VBUS) to Ground
Note 2: Between Pins 1 and 10 (D+ to D-)
Note 3: Pin 9 = 0 V
CDDFN10-0516P
Unit
4
A
10
kV
15
kV
-40 to +85
ºC
-55 to +150
ºC
Typ.
Max.
Unit
5
V
V
V
2.5
μA
6.5
V
17
22
pF
Typ.
Max.
Unit
3.3
V
V
V
1
μA
0.9
V
7.2
V
0.35
0.5
pF
0.02
0.04
pF
(Continued on next page)
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.