CDDFN-6-0504P Datasheet, PDF (1/4 Pages) Bourns Electronic Solutions – TVS/Steering Diode Array

*RoHS ^COMPLIANT
Features
■ Lead free as standard
■ RoHS compliant*
■ Low capacitance - 1.2 pF
■ No insertion loss to 2 GHz
■ ESD, EFT, surge protection
Applications
■ USB 2.0 & USB OTG
■ Multimedia card interface
■ SD card interface
■ SIM ports
■ Gigabit Ethernet
CDDFN6-0504P - TVS/Steering Diode Array
General Information
The CDDFN6-0504P device provides ESD, EFT and surge protection for high speed data
5
ports meeting IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC 61000-4-5 (Surge)
requirements. The Transient Voltage Suppressor array, protecting up to 4 data lines, offers a
Working Peak Reverse Voltage of 5 V and Minimum Breakdown Voltage of 6 V.
1
3
4
6
The molded packaged device will mount directly onto the industry standard DFN6 or QFN6
footprint. Bourns^® Chip Diodes are easy to handle with standard pick and place equipment
and their flat configuration minimizes roll away.
GND
Absolute Maximum Ratings
Parameter
Peak Pulse Power (tp = 8/20 µs) ^{(NOTE 1)}
Peak Pulse Current (tp = 8/20 µs) ^{(NOTE 1)}
Storage Temperature
Operating Temperature
Operating Supply Voltage
ESD per IEC 61000-4-2 (Air)(I/O to GND)
ESD per IEC 61000-4-2 (Contact) (I/O to GND)
ESD per IEC 61000-4-2 (Air)(V_CC to GND)
ESD per IEC 61000-4-2 (Contact)(V_CC to GND)
DC Voltage at any I/O Pin
Note 1. See Power Derating Curve.
Symbol
P_pk
I_PP
TSTG
T_OPR
VDC
V_{ESD_IO}
V_{ESD_VCC}
V_IO
Electrical Characteristics (@ T_A = 25 °C Unless Otherwise Noted)
Parameter
Maximum Reverse Standoff Voltage¹
Maximum Leakage Current¹ @ V_RWM
Symbol
V_RWM
I_D
Maximum Channel Leakage Current @ V_RWM
Minimum Reverse Breakdown Voltage¹
@ I_BV=1 mA
Maximum Forward Voltage⁴ @ IF = 15 mA
Typical Clamping Voltage²
Typical ESD Clamping Voltage -
I/O per IEC 61000-4-2 +6 kV, Contact²
Typical ESD Clamping Voltage-V_CC1
Maximum Channel Input Capacitance²
@ V_PIN5=5 V, V_PIN2=0 V, V_IN=2.5 V, f=1 MHz
Maximum Channel to Channel Input
Capacitance³ @ V_PIN5=5 V, V_PIN2=0 V,
V_IN=2.5 V, f=1 MHz
Maximum Variation of Channel Input
Capacitance @ V_PIN5=5 V, VPIN2=0 V, V_IN=2.5
V, f=1 MHz. (I/O Pin to GND)
I_CD
V_BR
V_F
V_C
V_{clamp_io}
V_{clamp_VCC}
C_IN
C_CROSS
ΔC_IN
Note 1. Pin 5 to Pin 2 (ground).
Note 2. Pin 1, 3, 4 or 6 to Pin 2 (ground).
Note 3. Between any two of pins 1, 3, 4, 6.
Note 4. Pin 2 (ground) to Pin 5.
CDDFN6-0504P
Unit
150
W
6.5
A
-55 to +150
ºC
-55 to +125
ºC
6
V
18
14
kV
30
30
kV
(GND-0.5) to (V_CC+0.5)
V
CDDFN6-0504P
Unit
5.0
V
5.0
µA
1.0
µA
6.0
V
1.0
V
8.1
V
12.5
V
9.0
V
1.6
pF
0.14
pF
0.06
pF
*RoHS Directive 2002/95/EC Jan 27, 2003 including Annex.
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.