CD216A Datasheet, PDF (1/7 Pages) Bourns Electronic Solutions – Lead free versions available, RoHS compliant (lead free version), Low profile, Surface mount, Very low forward voltage drop

*RoHS ^{VCEOARMVSAPIOILLINAASBNLTE}
Features
■ Lead free versions available
■ RoHS compliant (lead free version)*
■ Low profile
■ Surface mount
■ Very low forward voltage drop
Applications
■ Cellular phones
■ PDAs
■ Desktop PCs and notebooks
■ Digital cameras
■ MP3 players
CD216A-B120L ~ B140 MITE Chip Diode
General Information
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
smaller electronic components.
Bourns offers Schottky Rectifier Diodes for rectification applications in compact DO-216AA size chip package formats, which offer PCB real
estate savings and are considerably smaller than competitive parts. The Schottky Barrier Rectifier Diodes offer a forward current of 1 A with a
choice of repetitive peak reverse voltage of 20 V up to 40 V.
Bourns^® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration
minimizes roll away.
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
B120L
Forward Voltage (Max.)
(If = 1 A)
Typical Junction
Capacitance*
VF
0.45
CT
90
Reverse Current (Max.)
(at Rated VR)
IR
400
* Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
Absolute Ratings (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
B120L
Repetitive Peak Reverse Voltage
VRRM
20
DC Blocking Voltage
VDC
20
RMS Voltage
VRMS
14
Average Forward Current
@ TL = 130 °C
Peak Forward Surge Current**
IO
IFSM
50
Max. Instantaneous Forward Voltage***
@ IF = 0.1 A
@ IF = 1.0 A
@ IF = 2.0 A
@ IF = 3.0 A
0.34
VF
0.45
0.65
Max. Instantaneous Reverse Current
@ VR = 40 V
@ VR = 30 V
@ VR = 20 V
@ VR = 10 V
@ VR = 5 V
IR
0.4
0.1
Thermal Resistance
Junction to Lead (Anode)
Junction to Tab (Cathode)
Junction to Ambient
R_θJL
R_θJTAB
R_θJA
Storage Temperature
TSTG
Junction Temperature
TJ
** Surge Current 8.3 ms single phase, half sine wave, 60 Hz (JEDEC Method).
*** Pulse Test; Pulse Width = 300 uS, Duty Cycle = 2 %.
CD216-
B120R
B130L
0.53
0.38
75
70
10
410
CD216-
B120R
B130L
20
30
20
30
14
21
1
50
50
0.455
0.30
0.53
0.38
0.595
0.52
0.41
0.0100
0.13
0.0010
0.05
0.0005
35
20
250
-55 to +125
-55 to +150
Unit
B140
0.55
V
60
pF
500
µA
B140
40
40
28
40
0.36
0.55
0.85
0.50
0.15
Unit
V
V
V
A
A
V
mA
°C/W
°C/W
°C/W
°C
°C
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.