CD1005-S01575 Datasheet, PDF (1/6 Pages) Bourns Electronic Solutions – Switching Chip Diode Series

*RoHS ^COMPLIANT
S3
Features
■ RoHS compliant*
■ Leadless
■ High speed
This series is currently available but
not recommended for new designs.
Switching Chip Diode Series - 0603/1005
General Information
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
smaller electronic components.
Bourns offers small-signal high-speed Switching Diodes for switching digital signal applications, in compact chip package 0603 and 1005 size
format, which offer PCB real estate savings and are considerably smaller than competitive parts. The Switching Diodes offer a forward current
of 100 mA or 150 mA, a reverse voltage of 80 V or 75 V and also have a low leakage reverse current option. The diodes are RoHS compliant
with Cu/Ni/Au plated terminations and are compatible with lead-free manufacturing processes, conforming to many industry and government
regulations on lead-free components.
Bourns^® Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat configuration
minimizes roll away.
Electrical Characteristics (@ T_A = 25 °C Unless Otherwise Noted)
Parameter
Forward Voltage (Max.)
Capacitance Between Terminals (Max.)
Reverse Recovery Time (Max.)
Reverse Current (Max.)
Symbol ^{CDxxxx-S0180 CD1005-S01575 CDxxxx-S0180R}
Unit
VF
1.00
(I_f = 100 mA)
1.00
(I_f = 50 mA)
1.00
(I_f = 100 mA)
V
CT
4
(f = 100 MHz, V_r = 1 V DC)
pF
trr
4
(V_r = 6 V, I_f = 10 mA, R_L = 50 ohms)
nS
IR
0.1
(V_r = 80 V)
2.5
(V_r = 75 V)
0.05
(V_r = 75 V)
µA
Absolute Ratings (@ T_A = 25 °C Unless Otherwise Noted)
Parameter
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Forward Current, Surge Peak
Power Dissipation
CD0603
CD1005
Symbol
VRRM
VR
Io
Isurge
PD
CDxxxx-S0180
90
80
100
1**
CD1005-S01575
100
75
150
4***
150
300
Storage Temperature
Junction Temperature
TSTG
TJ
-40 to +125
-40 to +125
** Condition: 8.3 ms single half sine-wave superimposed on rate load
(JEDEC method).
*** Condition: 1.0 µs single half sine-wave superimposed on rate load
(JEDEC method).
How to Order
CDxxxx-S0180R
Unit
90
V
80
V
100
mA
1**
A
mW
°C
°C
CD 0603 - S 01 80 R
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/
EU June 8, 2011.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in differ-
ent applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
Common Code
Chip Diode
Package
• 0603
• 1005
Model
S = High-Speed Switching
Average Forward Current (Io) Code
01 = 100 mA
015 = 150 mA
(Code x 1000 mA = Average Forward Current)
Reverse Voltage (VR) Code
80 = 80 V
75 = 75 V
Reverse Current Suffix
R = Low Leakage IR (CDxxxx-S0180R)