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CD1005-B0520 Datasheet, PDF (1/4 Pages) Bourns Electronic Solutions – CD1005-B0520 - Surface Mount Schottky Barrier Diode
*RoHS COMPLIANT
Features
■ Lead free as standard
■ RoHS compliant*
■ Low forward voltage
■ Extremely thin/leadless package
■ Majority carrier conduction
■ Designed for mounting on small surface
Applications
■ Cellular phones
■ PDAs
■ Notebooks
■ GPS
CD1005-B0520 – Surface Mount Schottky Barrier Diode
General Information
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop
increasingly smaller electronic components. Bourns offers Schottky Barrier Diodes for these applications, in compact chip package 1005
(SOD323) size format, which offer PCB real estate savings and are considerably smaller than most competitive parts. The Schottky Barrier
Diodes offer a forward current of 0.5 A with a repetitive peak reverse voltage of 30 V.
Bourns® Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat configuration
minimizes roll away.
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
Min.
Nom.
Max.
Unit
Repetitive Peak Reverse Voltage
VRRM
30
V
Reverse Voltage
VR
20
V
Average Forward Rectified Current
IO
Maximum Instantaneous Forward Voltage
@ IF = 1.0 A
VF
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
(JEDEC Method)
Forward Voltage (IF = 100 mA)
VF
0.5
A
0.45
0.55
V
2
A
0.25
0.36
V
Forward Voltage (IF = 500 mA)
VF
0.35
0.47
V
Reverse Current (VR = 20 V)
IR
Capacitance between terminals
(f = 1 MHz, and 0 VDC reverse voltage)
CT
100
µA
100
pF
Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
CD1005-B0520
Unit
Junction Temperature Range
TJ
-40 to +125
°C
Storage Temperature Range
TSTG
-40 to +125
°C
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.