CD0805-S0180R Datasheet, PDF (1/6 Pages) Bourns Electronic Solutions – Switching Chip Diode Series

*RoHS ^COMPLIANT
6
Features
■ Lead free as standard
■ RoHS compliant*
■ Leadless
■ High speed
Applications
■ Cellular phones
■ PDAs
■ Desktop PCs and
notebooks
■ Digital cameras
■ MP3 players
CD0805-xxxx products
are currently available,
although not recom-
mended for new designs. Use
CD1005-xxxx products as an
alternative.
Switching Chip Diode Series - 0805 / 1206
General Information
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
smaller electronic components.
Bourns offers small-signal high-speed Switching Diodes for switching digital signal applications, in compact chip package 0805 and 1206 size
format, which offer PCB real estate savings and are considerably smaller than competitive parts. The Switching Diodes offer a forward current
of 100 mA or 150 mA, a reverse voltage of 80 V or 75 V and also have a low leakage reverse current option. The diodes are lead-free with
Cu/Ni/Au plated terminations and are compatible with lead-free manufacturing processes, conforming to many industry and government
regulations on lead-free components.
Bourns^® Chip Diodes conform to JEDEC standards, easy to handle on standard pick and place equipment and their flat configuration makes
roll away much more difficult.
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
CDxxxx-S0180 CDxxxx-S01575 CDxxxx-S0180R
Unit
Forward Voltage (Max.)
VF
Capacitance Between Terminals (Max.)
CT
Reverse Recovery Time (Max.)
trr
Reverse Current (Max.)
IR
1.00
(If = 100 mA)
1.00
(If = 50 mA)
1.00
(If = 100 mA)
V
3
(f = 100 MHz, Vr = 1 V DC)
pF
4
(Vr = 6V, If = 10 mA, RL = 50 Ω)
nS
0.1
(Vr = 80 V)
2.5
(Vr = 75 V)
0.05
(Vr = 75 V)
µA
Absolute Ratings (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
CDxxxx-S0180 CDxxxx-S01575 CDxxxx-S0180R
Unit
Repetitive Peak Reverse Voltage
VRRM
90
100
Reverse Voltage
VR
80
75
Average Forward Current
Io
100
150
Forward Current, Surge Peak
Isurge
1*
4**
Power Dissipation
PD
300
350
90
V
80
V
100
mA
1*
A
300
mW
Storage Temperature
TSTG
-55 to +125
°C
Junction Temperature
TJ
-55 to +125
°C
* Condition: 8.3 ms single half sine-wave superimposed on rate load
(JEDEC method).
** Condition: 1.0 µs single half sine-wave superimposed on rate load
(JEDEC method).
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
How To Order
CD 0805 - S 01 80 R
Common Code
Chip Diode
Package
• 0805
• 1206
Model
S = High Speed Switching
Average Forward
01 = 100 mA
Current
(Io)
Code
015 = 150 mA
(Code x 1000 mA = Average Forward Current)
Reverse Voltage
80 = 80 V
(VR)
Code
75 = 75 V
Reverse Current Suffix
R = Low Leakage IR (CDxxxx-S0180R)