BUT11 Datasheet, PDF (1/5 Pages) NXP Semiconductors – Silicon diffused power transistors

BUT11
NPN SILICON POWER TRANSISTOR
● Rugged Triple-Diffused Planar Construction
● 100 W at 25°C Case Temperature
● 5 A Continuous Collector Current
TO-220 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (I_E = 0)
Collector-emitter voltage (V_BE = 0)
Collector-emitter voltage (I_B = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTE 1: This value applies for t_p ≤ 10 ms, duty cycle ≤ 2%.
SYMBOL
V_CBO
V_CES
V_CEO
V_EBO
I_C
I_CM
P_tot
T_j
T_stg
VALUE
850
850
400
10
5
10
100
-65 to +150
-65 to +150
UNIT
V
V
V
V
A
A
W
°C
°C
PRODUCT INFORMATION
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1