BUL770 Datasheet, PDF (1/6 Pages) Power Innovations Ltd – NPN SILICON POWER TRANSISTOR

BUL770
NPN SILICON POWER TRANSISTOR
● Designed Specifically for High Frequency
Electronic Ballasts up to 50 W
● h_FE 7 to 21 at V_CE = 1 V, I_C = 800 mA
● Low Power Losses (On-state and Switching)
● Key Parameters Characterised at High
Temperature
● Tight and Reproducible Parametric
Distributions
TO-220 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C ambient temperature (unless otherwise noted )
RATING
Collector-emitter voltage (V_BE = 0)
Collector-base voltage (I_E = 0)
Collector-emitter voltage (I_B = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Peak collector current (see Note 2)
Continuous base current
Peak base current (see Note 2)
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTES: 1. This value applies for t_p = 10 ms, duty cycle ≤ 2%.
2. This value applies for t_p = 300 µs, duty cycle ≤ 2%.
SYMBOL
V_CES
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_CM
I_B
I_BM
P_tot
T_j
T_stg
VALUE
700
700
400
9
2.5
6
8
1.5
2.5
50
-65 to +150
-65 to +150
UNIT
V
V
V
V
A
A
A
A
A
W
°C
°C
PRODUCT INFORMATION
JULY 1991 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1