BU426 Datasheet, PDF (1/6 Pages) Mospec Semiconductor – POWER TRANSISTORS(6.0A,375-400V,113W)

BU426, BU426A
NPN SILICON POWER TRANSISTORS
● Rugged Triple-Diffused Planar Construction
● 900 Volt Blocking Capability
SOT-93 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (I_E = 0)
Collector-emitter voltage (V_BE = 0)
Collector-emitter voltage (I_B = 0)
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Peak base current (see Note 1)
Continuous device dissipation at (or below) 50°C case temperature
Operating junction temperature range
Storage temperature range
NOTE 1: This value applies for t_p ≤ 2 ms, duty cycle ≤ 2%.
BU426
BU426A
BU426
BU426A
BU426
BU426A
SYMBOL
V_CBO
V_CES
V_CEO
I_C
I_CM
I_B
I_BM
P_tot
T_j
T_stg
VALUE
800
900
800
900
375
400
6
10
+2, -0.1
±3
70
-65 to +150
-65 to +150
UNIT
V
V
V
A
A
A
A
W
°C
°C
PRODUCT INFORMATION
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1