BDW53 Datasheet, PDF (1/5 Pages) Power Innovations Ltd – NPN SILICON POWER DARLINGTONS

BDW53, BDW53A, BDW53B, BDW53C, BDW53D
NPN SILICON POWER DARLINGTONS
● Designed for Complementary Use with
BDW54, BDW54A, BDW54B, BDW54C and
BDW54D
● 40 W at 25°C Case Temperature
B
● 4 A Continuous Collector Current
C
● Minimum h_FE of 750 at 3V, 1.5 A
E
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I_E = 0)
Collector-emitter voltage (I_B = 0) (see Note 1)
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Operating temperature range
Operating free-air temperature range
BDW53
BDW53A
BDW53B
BDW53C
BDW53D
BDW53
BDW53A
BDW53B
BDW53C
BDW53D
V_CBO
V_CEO
V_EBO
I_C
I_B
P_tot
P_tot
½LI_C²
T_j
T_stg
T_A
45
60
80
V
100
120
45
60
80
V
100
120
5
V
4
A
50
mA
40
W
2
W
25
mJ
-65 to +150
°C
-65 to +150
°C
-65 to +150
°C
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I_B(on) = 5 mA, R_BE = 100 Ω,
V_BE(off) = 0, R_S = 0.1 Ω, V_CC = 20 V.
PRODUCT INFORMATION
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1