BD646 Datasheet, PDF (1/5 Pages) Power Innovations Ltd – PNP SILICON POWER DARLINGTONS

BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
● Designed for Complementary Use with
BD645, BD647, BD649 and BD651
● 62.5 W at 25°C Case Temperature
● 8 A Continuous Collector Current
● Minimum h_FE of 750 at 3V, 3 A
TO-220 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I_E = 0)
Collector-emitter voltage (I_B = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
BD646
BD648
BD650
BD652
BD646
BD648
BD650
BD652
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
P_tot
P_tot
½LI_C²
T_j
T_stg
T_L
-80
-100
V
-120
-140
-60
-80
V
-100
-120
-5
V
-8
A
-12
A
-0.3
A
62.5
W
2
W
50
mJ
-65 to +150
°C
-65 to +150
°C
260
°C
NOTES: 1. This value applies for t_p ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I_B(on) = -5 mA, R_BE = 100 Ω,
V_BE(off) = 0, R_S = 0.1 Ω, V_CC = -20 V.
PRODUCT INFORMATION
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1