BD546 Datasheet, PDF (1/5 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTORS

BD546, BD546A, BD546B, BD546C
PNP SILICON POWER TRANSISTORS
● Designed for Complementary Use with the
BD545 Series
● 85 W at 25°C Case Temperature
B
● 15 A Continuous Collector Current
● Customer-Specified Selections Available
C
SOT-93 PACKAGE
(TOP VIEW)
1
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (I_E = 0)
Collector-emitter voltage (I_B = 0) (see Note 1)
Emitter-base voltage
Continuous collector current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Operating free air temperature range
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
BD546
BD546A
BD546B
BD546C
BD546
BD546A
BD546B
BD546C
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.68 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
P_tot
P_tot
T_A
T_j
T_stg
T_L
VALUE
-40
-60
-80
-100
-40
-60
-80
-100
-5
-15
85
3.5
-65 to +150
-65 to +150
-65 to +150
260
UNIT
V
V
V
A
W
W
°C
°C
°C
°C
PRODUCT INFORMATION
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1