2FAN-C5R Datasheet, PDF (1/4 Pages) Bourns Electronic Solutions – Integrated Passive & Active Device using CSP

*RoHS ^{VCEOARMVSAPIOILLINAASBNLTE}
Features
■ Lead free versions available
■ RoHS compliant (lead free version)*
■ Bidirectional EMI filtering
■ ESD protection
■ Protects two audio lines
Applications
■ Cell phones
■ PDAs and notebooks
■ Digital cameras
■ MP3 players and GPS
2FAN-C5R - Integrated Passive & Active Device using CSP
General Information
The 2FAN-C5R device, manufactured using Thin Film on
Silicon technology, provides ESD protection and EMI
filtering for the audio port of portable electronic devices
such as cell phones, modems and PDAs. The device
incorporates two low pass filter channels where each
channel has a series 68 ohm resistor assuring a minimum
of -25 dB attenuation from 800 MHz to 3 GHz. The device
is suitable for EMI filtering of GSM, CDMA, W-CDMA,
WLAN and Bluetooth frequencies.
Each internal and external port of the two channels
includes a TVS diode for ESD protection. The ESD
protection provided by the component enables a data
port to withstand a minimum ±8 KV Contact / ±15 KV Air
Discharge per the ESD test method specified in IEC
61000-4-2. The device measures 1.00 mm x 1.33 mm and
is available in a 5 bump CSP package intended to be
mounted directly onto an FR4 printed circuit board. The
CSP device meets typical thermal cycle and bend test
specifications without the use of an underfill material.
SOLDER
BUMPS
SILICON
DIE
Electrical & Thermal Characteristics
Electrical Characteristics
(T_A = 25 °C unless otherwise noted)
Per Line Specification
Resistance
Capacitance @ 0 V 1 MHz
Rated Standoff Voltage
Breakdown Voltage @ 1 mA
Forward Voltage @ 10 mA
Leakage Current @ 3.3 V
Filter Attenuation @ 800 - 3000 MHz
ESD Protection: IEC 61000-4-2
Contact Discharge
Air Discharge
Thermal Characteristics
(T_A = 25 °C unless otherwise noted)
Operating Temperature Range
Storage Temperature Range
Power Dissipation Per Resistor
Symbol
R
C
V_WM
V_BR
V_F
I_R
S21
Minimum
55
32
6.0
-25
±8
±15
Nominal
68
40
5.0
0.8
0.1
-30
Maximum
81
48
0.5
T_J
-40
T_STG
-55
P_D
25
+85
25
+150
100
Unit
Ω
pF
V
V
V
µA
dB
kV
kV
°C
°C
mW
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.