2FAG-M12R Datasheet, PDF (1/3 Pages) Bourns Electronic Solutions – Integrated Passive & Active Devices

*RoHS ^COMPLIANT
Features
■ Lead free as standard
■ RoHS compliant*
■ ESD protection >25 kV
■ Protects up to 6 lines
■ Bidirectional EMI filtering
■ DFN-12 package
Applications
■ Cell phones
■ PDAs and notebooks
■ GPS and SMART cards
■ Color LCD display panel
2FAG-M12R Integrated Passive & Active Devices
General Information
The 2FAG-M12R device, manufactured using Thin Film on
Silicon technology, provides ESD protection for the external
ports of portable electronic devices such as cell phones,
notebooks and PDAs.
The ESD protection provided by the component enables a data
port to withstand a minimum ±8 KV Contact / ±15 KV Air
Discharge per the ESD test method specified in IEC 61000-4-2.
The device measures 3 mm x 1.4 mm and can be mounted
directly onto an FR4 printed circuit board. The device meets
typical thermal cycle and bend test specifications without the
use of an underfill material.
INT1~6
GND
FOR EACH LINE
100 OHM
10 pF
10 pF
EXT1~6
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
Resistance
R
Capacitance @ 2.5 V, 1 MHz
C
Rated Standoff Voltage
VWM
Breakdown Voltage @ 1 mA
VBR
Forward Voltage @ 10 mA
VF
Leakage Current @ 3 V
ID
ESD Protection: IEC 61000-4-2
Contact Discharge
Air Discharge
Frequency:
Attenuation @ 800-3000 MHz
fC
Cut-off (50 Ω I/O) Zero Bias
DC Power per Resistor
P
Min.
80
16
6
±8
±15
25
Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
Min.
-40
-55
Nom.
100
20
0.8
35
150
Nom.
+25
+25
Max.
120
24
5
0.1
100
Max.
+85
+150
Unit
Ω
pF
V
V
V
µA
kV
kV
db
MHz
mW
Unit
°C
°C
*RoHS Directive 2002/95/EC Jan 27 2003, including Annex
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.