2FAF-C10R Datasheet, PDF (1/4 Pages) Bourns Electronic Solutions – Integrated Passive & Active Device

*RoHS ^{VCEOARMVSAPIOILLINAASBNLTE}
Features
■ Lead free versions available
■ RoHS compliant (lead free version)*
■ Bidirectional EMI filtering
■ ESD protection > 25 k volts
■ Protects 4 data lines
Applications
■ Cell phones
■ PDAs and notebooks
■ Digital cameras
■ MP3 players and GPS
2FAF-C10R - Integrated Passive & Active Device
General Information
The 2FAF-C10R device, manufactured using Thin Film on Silicon
technology, provides ESD protection and EMI filtering for the data
ports of portable electronic devices such as cell phones, modems
and PDAs. The device incorporates four low pass filter channels
where each channel has a series 100 ohm resistor assuring a
minimum of –28 dB attenuation from 800 MHz to 3 GHz. The device
is suitable for EMI filtering of GSM, CDMA, W-CDMA, WLAN and
Bluetooth frequencies.
Each internal and external port of the four channels includes a TVS
diode for ESD protection. The ESD protection provided by the
component enables a data port to withstand a minimum ±8 KV
Contact / ±15 KV Air Discharge per the ESD test method specified in
IEC 61000-4-2. The device measures 1.33 mm x 2 mm and is
available in a 10 bump CSP package intended to be mounted directly
onto an FR4 printed circuit board. The CSP device meets typical
thermal cycle and bend test specifications without the use of an
underfill material.
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Per Line Specification
Symbol
Resistance
R
Capacitance @ 2.5 V, 1 MHz
C
Rated Standoff Voltage
VWM
Breakdown Voltage @ 1 mA
VBR
Forward Voltage @ 10 mA
VF
Leakage Current @ 3.3 V
IR
Filter Attenuation @ 800-3000 MHz
S21
ESD Protection: IEC 61000-4-2
Contact Discharge
Air Discharge
Power Dissipation per Resistor
PD
Min.
80
24
6.0
-28
±8
±15
Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
Min.
-40
-55
SOLDER
BUMPS
Nom.
100
30
5.0
0.8
0.05
-35
Nom.
+25
+25
SILICON
DIE
Max.
Unit
120
—
36
pF
V
V
V
0.1
µA
dB
kV
kV
100
mW
Max.
Unit
+85
°C
+150
°C
*RoHS Directive 2002/95/EC Jan 27 2003, including Annex
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.