2FAD-C20R Datasheet, PDF (1/4 Pages) Bourns Electronic Solutions – Integrated Passive & Active Device using CSP

*RoHS ^{VCEOARMVSAPIOILLINAASBNLTE}
Features
■ Lead free versions available
■ RoHS compliant (lead free version)*
■ New Product Development
■ Integrated Passive Device
■ RF Low Pass Filter Performance
■ ESD Protection to IEC61000-4-2 Spec.
2FAD-C20R Series - Integrated Passive & Active Device using CSP
General Information
The 2FAD-C20R devices, manufactured using Thin Film
On Silicon technology provide ESD protection and EMI
filtering for the data port of portable electronic devices
such as cell phones, modems and PDAs. The device
incorporates six low pass filter channels. Each channel
has a series 100 ohm resistor assuring a minimum of
-30 dB attenuation from 800 MHz to 3 GHz. The device
is suitable for EMI filtering of GSM, CDMA, W-CDMA,
WLAN and Bluetooth frequencies.
Each external port of the six channels includes a back-to-
back 6.5 Volt Zener diode for ESD protection. Two
additional standalone 6.5 Volt Zener diodes are available
for ESD protection on power lines or USB data ports. The
ESD protection provided by the component enables an
eight line data port to withstand a minimum ±8 KV
Contact / ±15 KV Air Discharge when tested according to
the ESD method specified in IEC 61000-4-2. The device
measures 2.04 mm x 2.64 mm and is available in a 20 pin
(4 x 5 array) CSP package intended to be mounted
directly onto an FR4 printed circuit board. The CSP
device meets typical thermal cycle and bend test
specifications without the use of an underfill material.
SOLDER
BUMPS
SILICON
DIE
Figure 1 – CSP Format
Electrical & Thermal Characteristics
Electrical Characteristics
(T_A = 25 °C unless otherwise noted)
Zener Diode
Breakdown Voltage @ 1 mA
Leakage Current @ 3 V
ESD Performance (Note 1 & 2)
Withstand: Contact Discharge
Withstand: Air Discharge
Let Through: Contact Discharge
Let Through: Air Discharge
Channel Specification
Resistance
Capacitance @ 1 V & 1 MHz
Filter Attenuation: 800 MHz – 3000 MHz
Thermal Characteristics
(T_A = 25 °C unless otherwise noted)
Operating Temperature
Storage Temperature
Total Power Dissipation @ 70 °C
Symbol
V_BR
I_R
R
C
Minimum
6
±8
±15
90
-30
Nominal
7.2
Maximum
8
1
±150
±150
100
110
50
55
-40
T_J
-40
T_stg
-60
P_D
25
+85
25
+125
100
Unit
V
uA
kV
kV
V
V
Ω
pF
dB
°C
°C
mW
Note:
1. The IEC 61000-4-2 test method will be adapted for component level testing. The device will provide the specified ESD protection
performance on the “EXT1 – EXT8” pins only.
2. “Let Through” is a measure of the component of an incident ESD transient that the protection device allows through to the
downstream circuitry.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.