SEC3-808-01 Datasheet, PDF (2/4 Pages) Bookham, Inc. – 3.5W 808nm High Power Single Emitter Laser Diode on C-mount

Data Sheet
Characteristics
Parameter
CW Output Power
Center Wavelength _[1]
Spectral Width (FWHM)
Wavelength Shift with Temperature
Beam Divergence (FWHM)
Parallel to Junction
Perpendicular to Junction
Polarization
Threshold Current
Slope Efficiency
Conversion Efficiency
Series Resistance
Operating Current
Operating Voltage
Operating Temperature
[1] Reduced wavelength window available on request.
Chip Dimensions
Parameter
Chip Width
Resonator Length
Chip Thickness
Emitter Width
Symbol
b
l
d
w
Symbol
P_op
λ_c
∆λ
dλ_c/dT_op
θ_//
θ⊥
–
I_th
η_D=P_op/(I_op-I_th)
H=P_op/(V_op x I_op)
R_s
I_op
V_op
T_op
Typical
400
3600
150
90
Typical
3.5
808 ± 8
2
0.3
6
27
TM
600
1.1
50
0.03
3.7
1.9
25 ± 5
Unit
µm
µm
µm
µm
Unit
W
nm
nm
nm/°C
deg
–
mA
W/A
%
Ω
A
V
°C
2