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| TIP41 Datasheet, PDF (2/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(6A,40-100V,65W) | |||
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TIP41, TIP41A, TIP41B, TIP41C
TIP42, TIP42A, TIP42B, TIP42C
Collector current (Peak value)
Base current
Total power dissipation up to TC = 25°C
Derate above 25°C
Total power dissipation up to TA = 25°C
Derate above 25°C
Junction temperature
Storage temperature
THERMAL RESISTANCE
From junction to ambient
From junction to case
ICM
IB
Ptot
Ptot
Tj
Tstg
Rth jâa
Rth jâc
max.
max.
max.
max.
max.
max.
max.
10
2.0
65
0.52
2.0
0.016
150
â65 to +150
62.5
1.92
A
A
W
W/°C
W
W/°C
°C
ºC
°C/W
°C/W
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IB = 0; VCE = 30 V
IB = 0; VCE = 60 V
VBE = 0; VCE = VCEO
Emitter cut-off current
IC = 0; VEB = 5 V
Breakdown voltages
IC = 30 mA; IB = 0
IC = 1 mA; IE = 0
IE = 1 mA; IC = 0
Saturation voltage
IC = 6 A; IB = 0.6 A
Base-emitter on voltage
IC = 6 A; VCE = 4 V
D.C. current gain
IC = 0.3 A; VCE = 4 V
41 41A 41B 41C
42 42A 42B 42C
ICEO
ICEO
ICES
max. 0.7 0.7 â â mA
max. â â 0.7 0.7 mA
max.
0.4
mA
IEBO
max.
1.0
mA
VCEO(sus)* min. 40
VCBO
min. 40
VEBO
min.
60 80 100 V
60 80 100 V
5.0
V
VCEsat* max.
1.5
V
VBE(on)* max.
2.0
V
hFE*
min.
30
IC = 3 A; VCE = 4 V
hFE*
min.
15
max.
75
Small-signal current gain
IC = 0.5 A; VCE = 10 V; f = 1 KHz |hfe|
min.
20
Transition frequency
IC = 0.5 A; VCE = 10 V; f = 1 MHz fT
min. (1)
3
MHz
* Pulse test: pulse width ⤠300 µs, duty cycle ⤠2%.
(1) fT = |hfe|⢠ftest
http://www.bocasemi.com page: 2
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