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| TIP31 Datasheet, PDF (2/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(3A,40-100V,40W) | |||
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TIP31, TIP31A, TIP31B, TIP31C
TIP32, TIP32A, TIP32B, TIP32C
Collector current
IC
Collector current (Peak)
ICM
Base current
IB
Total power dissipation upto TC=25°C Ptot
Derate above 25°C
Total power dissipation upto TA=25°C Ptot
Derate above 25°C
Junction temperature
Tj
Storage temperature
Tstg
THERMAL RESISTANCE
From junction to case
From junction to ambient
Rth jâc
Rth jâa
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IB = 0; VCE = 30V
IB = 0; VCE = 60V
VBE = 0; VCE = VCEO(max)
Emitter cut-off current
IC = 0; VEB = 5 V
Breakdown voltages
IC = 30 mA; IB = 0
IC = 1 mA; IE = 0
IE = 1 mA; IC = 0
Saturation voltage
IC = 3 A; IB = 375 mA
Base emitter on voltage
IC = 3 A; VCE = 4 V
D.C. current gain
IC = 1 A; VCE = 4 V
IC = 3 A; VCE = 4 V
ICEO
ICEO
ICES
IEBO
VCEO(sus)*
VCBO
VEBO
VCEsat*
VBE(on)*
hFE*
hFE*
Small-signal current gain
IC = 0.5A; VCE = 10V; f = 1 KHz
Transition frequency
IC = 0.5A; VCE = 10V; f = 1 MHz
|hfe|
fT (1)
* Pulse test: pulse width ⤠300 µs; duty cycle ⤠2%.
(1) fT = |hfe|⢠ftest
max.
max.
max.
max.
max
max.
max
max.
3.0
5.0
1.0
40
0.32
2
0.016
150
â65 to +150
A
A
A
W
W/°C
W
W/°C
°C
ºC
3.125
°C/W
62.5
°C/W
31 31A 31B 31C
32 32A 32B 32C
max. 0.3 0.3 â â mA
max. â â 0.3 0.3 mA
max.
0.2
mA
max.
1.0
mA
min. 40 60 80 100 V
min. 40 60 80 100 V
min.
5.0
V
max.
1.2
V
max.
1.8
V
min.
25
min.
10
max.
50
min.
20
min.
3
MHz
http://www.bocasemi.com page: 2
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