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| TIP29 Datasheet, PDF (2/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(1.0A,40-100V,30W) | |||
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TIP29, TIP29A, TIP29B, TIP29C
TIP30, TIP30A, TIP30B, TIP30C
Emitter-base voltage (open collector)
Collector current
Collector current (Peak)
Base current
Total power dissipation upto TC=25°C
Derate above 25°C
Total power dissipation upto TA=25°C
Derate above 25°C
Junction temperature
Storage temperature
THERMAL RESISTANCE
From junction to ambient
From junction to case
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IB = 0; VCE = 30V
IB = 0; VCE = 60V
VEB = 0; VCE = VCEO
Emitter cut-off current
IC = 0; VEB = 5 V
Breakdown voltages
IC = 30 mA; IB = 0
IC = 1 mA; IE = 0
IE = 1 mA; IC = 0
Saturation voltages
IC = 1 A; IB = 125 mA
Base emitter on voltage
IC = 1 A; VCE = 4 V
D.C. current gain
IC = 0.2 A; VCE = 4 V
IC = 1 A; VCE = 4 V
Small-signal current gain
IC = 0.2A; VCE = 10V; f = 1 KHz
Transition frequency
IC = 0.2A; VCE = 10V; f = 1 MHz
VEBO
IC
ICM
IB
Ptot
Ptot
Tj
Tstg
max.
max.
max.
max.
max.
max.
max.
max.
max.
Rth jâa
Rth jâc
5.0
1.0
3.0
0.4
30
0.24
2
0.016
150
â65 to +150
V
A
A
A
W
W/°C
W
W/°C
°C
ºC
62.5
°C/W
4.167
°C/W
29 29A 29B 29C
30 30A 30B 30C
ICEO
ICEO
ICES
IEBO
max. 0.3 0.3 â â mA
max. â â 0.3 0.3 mA
max.
0.2
mA
max.
1.0
mA
VCEO(sus)* min. 40 60 80 100 V
VCBO
min. 40 60 80 100 V
VEBO
min.
5.0
V
VCEsat* max.
0.7
V
VBE(on)* max.
1.3
V
hFE*
min.
40
hFE*
min.
15
max.
75
hfe
min.
20
fT (2)
min.
3
MHz
* Pulse test: pulse width ⤠300 µs; duty cycle ⤠2%.
(2) fT = |hfe|⢠ftest.
http://www.bocasemi.com page: 2
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