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| TIP120 Datasheet, PDF (2/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(5.0A,60-100V,65W) | |||
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Boca Semiconductor Corp.
BSC
TIP120, TIP121, TIP122
TIP125, TIP126, TIP127
Collector current
IC
Collector current (peak)
ICM
Base current
IB
Total power dissipation up to TC = 25°C Ptot
Derate above 25°C
Total power dissipation up to TA = 25°C Ptot
Derate above 25°C
Junction temperature
Tj
Storage temperature
Tstg
THERMAL RESISTANCE
From junction to ambient
From junction to case
Rth jâa
Rth jâc
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IE = 0; VCB = 60 V
IE = 0; VCB = 80 V
IE = 0; VCB = 100 V
IB = 0; VCE = 30V
IB = 0; VCE = 40V
IB = 0; VCE = 50V
Emitter cut-off current
IC = 0; VEB = 5 V
Breakdown voltages
IC = 100 mA; IB = 0
IC = 1 mA; IE = 0
IE = 1 mA; IC = 0
Saturation voltages
IC = 3.0 A; IB = 12 mA
IC = 5.0 A; IB = 20 mA
Base-emitter on voltage
IC = 3A; VCE = 3V
D.C. current gain
IC = 0.5A; VCE = 3V
IC = 3A; VCE = 3V
Small signal current gain
IC = 3A; VCE = 4V; f = 1 MHz
Output capacitance at f = 0.1 MHz
IE = 0; VCB = 10V PNP
NPN
ICBO
ICBO
ICBO
ICEO
ICEO
ICEO
IEBO
VCEO(sus)*
VCBO
VEBO
VCEsat*
VCEsat*
VBE(on)*
hFE*
|hfe|
Co
Co
* Pulse test: pulse width ⤠300 µs; duty cycle ⤠2%.
max.
max.
max.
max.
max
max.
max
max.
5.0
8
120
65
0.52
2
0.016
150
â65 to +150
A
A
mA
W
W/°C
W
W/°C
°C
ºC
62.5
°C/W
1.92
°C/W
120 121 122
125 126 127
max. 0.2 â â mA
max. â 0.2 â mA
max. â â 0.2 mA
max. 0.5 â â mA
max. â 0.5 â mA
max. â â 0.5 mA
max.
2.0
mA
min. 60
min. 60
min.
80 100 V
80 100 V
5.0
V
max.
2.0
V
max.
4.0
V
max.
2.5
V
min.
1.0
min.
1.0
min.
4.0
max.
300
pF
max.
200
pF
http://www.bocasemi.com page: 2
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