2N5679 Datasheet, PDF (2/2 Pages) Seme LAB – PNP SILICON TRANSISTORS

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION 2N5679
2N5681
DC Current Gain
hFE* IC=1A,VCE=2V
>5.0
IC=250mA,VCE=2V
40-150
Collector Emitter Saturation Voltage VCE(Sat)* IC=250mA,IB=25mA
<0.60
IC=500mA,IB=50mA
<1.0
IC=1A, IB=200mA
<2,0
Base Emitter on Voltage
VBE(on)* IC=250mA,VCE=2V
<1.0
2N5679-82
2N5680
2N5682
-
40-150
<0.60
<1.0
<2.0
<1.0
SMALL SIGNAL CHARACTERISTICS
Small Signal Current Gain
hfe IC=200mA, VCE=1.5V >20
>20
f=1kHz
Out-Put Capacitance
Cob VCB=20V, IE=0
<50
<50
f=1MHz
Transistors Frequency
ft
IC=100mA, VCE=10V
>30
>30
f=10MHz
*Pulse Test: Pulse Width: =300us, Duty Cycle=2%
UNITS
V
V
V
V
pF
MHz
TO-39 Metal Can Package
A
DIM MIN MAX
B
A
8.50 9.39
B
7.74 8.50
C
6.09 6.60
D
0.40 0.53
E
—
0.88
F
2.41 2.66
G
4.82 5.33
H
0.71 0.86
J
0.73 1.02
K
12.70
—
L 42 DEG 48 DEG
D
G
2
PIN CONFIGURATION
1
3
1. EMITTER
2. BASE
L
H
3. COLLECTOR
J
32 ¹
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