BC556 Datasheet, PDF (1/3 Pages) Motorola, Inc – Amplifier Transistors

PNP SILICON PLANAR EPITAXIAL TRANSISTORS
Boca Semiconductor Corp.
BSC
http://www.bocasemi.com
BC 556, A, B
BC 557, 8, A, B, C
TO-92
EBC
APPLICATION
PNP General Purpose Transistors, Especially Suited For Use in Driver Stages of Audio
Amplifier, Low Noise Input Stages of Tape Recorders, HI-FI Amplifiers, Signal Processing
Circuits of Television Receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C unless otherwise specified)
DESCRIPTION
SYMBOL
BC556
Collector -Emitter Voltage
VCEO
65
Collector -Emitter Voltage
VCES
80
Collector -Base Voltage
VCBO
80
Emitter -Base Voltage
VEBO
Collector Current Continuous
IC
Peak ICM
Base Current -Peak
IBM
Emitter Current- Peak
IEM
Power Dissipation@ Ta=25 degC
PTA
Derate Above 25 deg C
Storage Temperature
Tstg
Junction Temperature
Tj
BC557
45
50
50
5.0
100
200
200
200
500
4.0
-65 to +150
150
BC558
30
30
30
UNITS
V
V
V
V
mA
mA
mA
mA
mW
mW/deg C
deg C
deg C
THERMAL RESISTANCE
Junction to Ambient
Rth(j-a)
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION BC556
Collector -Emitter Voltage
VCEO IC=2mA,IB=0
>65
Collector -Base Voltage
VCBO
IC=100uA.IE=0
>80
Emitter-Base Voltage
VEBO
IE=100uA, IC=0 ALL
Collector-Cut off Current
ICBO
VCB=30V, IE=0 ALL
250
deg C/W
BC557 BC558
>45
>30
>50
>30
>5.0
<15
UNITS
V
V
V
nA
Tj=150 deg C
VCB=30V, IE=0 ALL
<5.0
uA
ICES
VCE=80V, VBE=0
<15
-
-
nA
VCE=50V, VBE=0
-
<15
-
nA
VCE=30V, VBE=0
-
-
<15
nA
Collector-Cut off Current
ICES
TJ=125 deg C
VCE=80V, VBE=0
VCE=50V, VBE=0
VCE=30V, VBE=0
<4.0
-
-
-
-
uA
<4.0
uA
-
<4.0
uA