2N4036 Datasheet, PDF (1/2 Pages) Motorola, Inc – CASE 79.04, STYLE 1 TO-39 (TO-205AD)

PNP SILICON PLANAR TRANSISTOR
2N4036
TO-39
Boca Semiconductor Corp.
BSC
http://www.bocasemi.com
General Purpose Transistor
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
VALUE
Collector -Emitter Voltage
VCEO
65
Collector -Base Voltage
VCBO
90
Emitter Base Voltage
VEBO
7.0
Base Current
IB
0.5
Collector Current -Continuous
IC
1.0
Power Dissipation @ Tc=25 deg C
PD
5.0
Linear Derating Factor
28.6
Power Dissipation @ Ta=25 deg C
PD
1.0
Linear Derating Factor
5.72
Operating & Storage Junction
Tj, Tstg
-65 to +200
Temperature Range
Lead Temperature 1/16" from Case
TL
230
for 10 Seconds
Thermal Resistance
Junction to Case
Rth (j-c)
35
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
Collector -Emitter Voltage
VCEO IC=10mA, IB=0
Collector -Base Voltage
Collector Cut off Current
VCBO IC=100uA, IE=0
ICEX VCE=85V, VBE=1.5V
ICBO VCB=90V, IE=0
Emitter Cut off Current
IEBO VBE=7V, IC=0
DC Current Gain
hFE 0.1mA, VCE=10V
IC=150mA, VCE=2V
IC=150mA, VCE=10V
IC=500mA, VCE=10V
Collector -Emitter (sat) Voltage
VCE(sat) IC=150mA, IB=15mA
Base -Emitter (sat) Voltage
VBE(sat) IC=150mA, IB=15mA
Small- Signal Characteristics
Current Gain- High Frequency
lhfel IC=50mA,VCE=10V, f=20MHz
UNIT
V
V
V
A
A
W
mW/deg C
W
mW/deg C
deg C
deg C
deg C/W
MIN TYP MAX
65
-
90
-
-
-
- 0.1
-
1.0
-
10
20
-
-
20
200
40
-
140
20
-
-
0.65
-
1.4
UNIT
V
V
mA
uA
uA
V
V
3.0 -
-
Switching Characteristics
Rise time
Sorage time
Fall time
tr IB1=15mA,IC=150mA, VCE=30V -
ts IB2=15mA,IC=150mA, VCE=30V -
tf IB2=15mA,IC=150mA, VCE=30V -
70
ns
600
ns
100
ns
Turn-on time
Turn-off time
ton IC=150mA, VCE=30V, IB1=IB2= -
toff 15mA
-
110
ns
700
ns
Continental Device India Limited
Data Sheet
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