2N2369 Datasheet, PDF (1/2 Pages) Motorola, Inc – Switching Transistors

NPN SILICON PLANAR EPITAXIAL TRANSISTORS
Boca Semiconductor Corp.
BSC
2N2369
2N2369A
TO-18
APPLICATIONS
2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With
Low Power & High Speed Switching Applications.
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
VALUE
Collector -Emitter Voltage
VCEO
15
Collector -Emitter Voltage
VCES
40
Collector -Base Voltage
VCBO
40
Emitter -Base Voltage
VEBO
4.5
Collector Current Continuous
IC
200
Collector Current Peak(10us pulse) IC(peak)
500
Power Dissipation@ Ta=25 degC
PD
360
Derate Above 25 deg C
2.06
@Tc=25 deg C PD
1.2
@Tc=100 deg C PD
0.68
Derate Above100 deg C
6.85
Operating And Storage Junction
Tj, Tstg
-65 to +200
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
2N2369
Collector -Emitter Voltage
VCEO*(sus)IC=10mA, IB=0
>15
Collector -Emitter Voltage
VCES
IC=10uA, VBE=0
>40
Collector -Base Voltage
VCBO IC=10uA, IE=0
>40
Emitter -Base Voltage
VEBO
IE=10uA, IC=0
>4.5
Collector-Cut off Current
ICBO
VCB=20V, IE=0
<400
VCB=20V, IE=0, Ta=150 deg C <30
ICES
VCE=20V, VBE=0
-
Base Current
IB
VCE=20V, VBE=0
-
Collector Emitter Saturation Voltage VCE(Sat)* IC=10mA,IB=1mA
<0.25
IC=30mA,IB=3mA
-
IC=100mA,IB=10mA
-
IC=10mA,IB=1mA,Ta= +125 deg C -
Base Emitter Saturation Voltage
VBE(Sat) * IC=10mA,IB=1mA
0.7-0.85
IC=30mA,IB=3mA
-
IC=100mA,IB=10mA
-
IC=10mA,IB=1mA,Ta= +125 deg C -
IC=10mA,IB=1mA, Ta= -55 deg C -
DC Current
hFE*
IC=10mA, VCE=1V
40-120
IC=10mA,VCE=1V, Ta= -55 deg C >20
IC=10mA,VCE=0.35V, Ta= -55 deg C -
UNIT
V
V
V
V
mA
mA
mW
mW/deg C
W
W
mW/deg C
deg C
2N2369A
>15
>40
>40
>4.5
-
-
<400
<400
<0.20
<0.25
<0.50
<0.30
0.7-0.85
<1.15
<1.60
>0.59
<1.02
40-120
-
>20
UNIT
V
V
V
V
nA
uA
nA
nA
V
V
V
V
V
V
V
V
V
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