2N2218A Datasheet, PDF (1/3 Pages) Boca Semiconductor Corporation – NPN SILICON PLANAR SWITCHING TRANSISTORS

NPN SILICON PLANAR SWITCHING TRANSISTORS
Boca Semiconductor Corp.
BSC
2N2218A
2N2219A
TO-39
Switching And Linear Application DC And VHF Amplifier Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
2N2218A,19A
Collector -Emitter Voltage
VCEO
40
Collector -Base Voltage
VCBO
75
Emitter -Base Voltage
VEBO
6.0
Collector Current Continuous
IC
800
Power Dissipation @Ta=25 degC
PD
800
Derate Above 25deg C
4.57
@ Tc=25 degC
PD
3.0
Derate Above 25deg C
17.1
Operating And Storage Junction
Tj, Tstg
-65 to +200
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector -Emitter Voltage
Collector -Base Voltage
Emitter-Base Voltage
Collector-Cut off Current
SYMBOL TEST CONDITION
VCEO
VCBO
VEBO
ICBO
IC=10mA,IB=0
IC=10uA.IE=0
IE=10uA, IC=0
VCB=60V, IE=0
VALUE
MIN MAX
40
-
75
-
6.0
-
-
10
Emitter-Cut off Current
Base-Cut off Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Ta=150 deg C
VCB=60V, IE=0
-
10
ICEX
VCE=60V, VEB=3V
-
10
IEBO
VEB=3V, IC=0
-
10
IBL
VCE=60V, VEB=3V
-
20
VCE(Sat)* IC=150mA,IB=15mA
-
0.3
IC=500mA,IB=50mA
1.0
VBE(Sat) * IC=150mA,IB=15mA
-
0.6-1.2
IC=500mA,IB=50mA
-
2.0
UNIT
V
V
V
mA
mW
mW/deg C
W
mW/deg C
deg C
UNIT
V
V
V
nA
uA
nA
nA
nA
V
V
V
V
http://www.bocasemi.com
page 1