HSMS-2829 Datasheet, PDF (4/15 Pages) Broadcom Corporation. – Surface Mount RF Schottky Barrier Diodes

Typical Performance, T_C = 25°C (unless otherwise noted), Single Diode
100
T_A = +125C
T_A = +75C
10
T_A = +25C
T_A = –25C
1
100,000
10,000
1000
100
0.1
0.01
0
0.10 0.20 0.30 0.40 0.50
V_F – FORWARD VOLTAGE (V)
Figure 1. Forward Current vs. Forward Voltage at
Temperatures.
10
T_A = +125C
T_A = +75C
1
T_A = +25C
0
5
10
15
V_R – REVERSE VOLTAGE (V)
Figure 2. Reverse Current vs. Reverse Voltage at
Temperatures.
1
0.8
0.6
0.4
0.2
0
0
2
4
6
8
V_R – REVERSE VOLTAGE (V)
Figure 3. Total Capacitance vs. Reverse Voltage.
1000
100
10
1
0.1
1
10
100
I_F – FORWARD CURRENT (mA)
Figure 4. Dynamic Resistance vs. Forward Current.
30
30
10
I_F (Left Scale)
10
V_F (Right Scale)
1
1
0.3
0.3
0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_F - FORWARD VOLTAGE (V)
Figure 5. Typical V_f Match, Series Pairs and Quads at
Mixer Bias Levels.
100
1.0
I_F (Left Scale)
10
V_F (Right Scale)
1
0.1
0.10
0.15
0.20
0.25
V_F - FORWARD VOLTAGE (V)
Figure 6. Typical V_f Match, Series Pairs at Detector Bias
Levels.
1
DC bias = 3 A
-25C
0.1
+25C
+75C
RF in 18 nH HSMS-282B Vo
0.01
3.3 nH
100 pF
100 K
0.001
-40
-30
-20
-10
0
P_in – INPUT POWER (dBm)
Figure 7. Typical Output Voltage vs. Input Power,
Small Signal Detector Operating at 850 MHz.
10
1
0.1
0.01
+25C
RF in
HSMS-282B
Vo
0.001
0.0001
68
100 pF
4.7 K
1E-005
-20 -10
0
10
20
30
P_in – INPUT POWER (dBm)
Figure 8. Typical Output Voltage vs. Input Power,
Large Signal Detector Operating at 915 MHz.
10
9
8
7
6
0 2 4 6 8 10 12
LOCAL OSCILLATOR POWER (dBm)
Figure 9. Typical Conversion Loss vs. L.O. Drive, 2.0 GHz
(Ref AN997).
4