HSMS-2818 Datasheet, PDF (4/10 Pages) Broadcom Corporation. – Surface Mount RF Schottky Barrier Diodes

Typical Performance, T_C = 25°C (unless otherwise noted), Single Diode
100
100,000
10
1
0.1
0.01
0
T_A = +125C
T_A = +75C
T_A = +25C
T_A = –25C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V_F – FORWARD VOLTAGE (V)
Figure 1. Forward Current vs. Forward Voltage at
Temperatures.
10,000
1000
100
10
T_A = +125C
T_A = +75C
1
T_A = +25C
0
5
10
15
V_R – REVERSE VOLTAGE (V)
Figure 2. Reverse Current vs. Reverse Voltage at
Temperatures.
1000
100
10
1
0.1
1
10
100
I_F – FORWARD CURRENT (mA)
Figure 3. Dynamic Resistance vs. Forward
Current.
1.25
1
0.75
0.50
0.25
0
0 2 4 6 8 10 12 14 16
V_R – REVERSE VOLTAGE (V)
Figure 4. Total Capacitance vs. Reverse Voltage.
30
30
10
I_F (Left Scale)
10
V_F (Right Scale)
1
1
0.3
0.3
0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_F - FORWARD VOLTAGE (V)
Figure 5. Typical V_f Match, Pairs and Quads.