AT-30511 Datasheet, PDF (4/10 Pages) Agilent(Hewlett-Packard) – Low Current, High Performance NPN Silicon Bipolar Transistor

AT-30511, AT-30533 Typical Performance, continued
10
25
25
8
5 mA
6
4
2 mA
2
20
5 mA
15
2 mA
10
5
20
5 mA
15
10
2 mA
5
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 8. AT-30511 and AT-30533 Power at 1 dB Gain
Compression vs. Frequency and Current at V_ce = 5 V.
AT-30511 fig 8
6
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 9. AT-30511 1 dB Compressed Gain vs. Frequen-
cy and Current at V_ce = 5 V.
AT-30511 fig 9
25
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 10. AT-30533 1 dB Compressed Gain vs. Fre-
quency and Current at V_ce = 5 V.
AT-30511 fig 10
25
4
2
5 mA
0
2 mA
-2
20
5 mA
15
2 mA
10
5
20
5 mA
15
10
2 mA
5
-4
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 11. AT-30511 and AT-30533 Power at 1 dB Gain
Compression vs. Frequency and Current at V_ce = 1 V.
AT-30511 fig 11
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 12. AT-30511 1 dB Compressed Gain vs. Fre-
quency and Current at V_ce = 1 V.
AT-30511 fig 12
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 13. AT-30533 1 dB Compressed Gain vs. Fre-
quency and Current at V_ce = 1 V.
AT-30511 fig 13
25
20
Ga
15
10
NF
5
2.5
25
2.0
20
1.5
15
1.0
10
0.5
5
Ga
NF
2.5
0
IM3 (dBc)
IM5 (dBc)
2.0
IM7 (dBc)
-20
1.5
-40
1.0
-60
0.5
0
-50
0
0
50
100
TEMPERATURE (°C)
Figure 14. AT-30511 Noise Figure and Associated Gain
at V_ce = 2.7 V, I_c = 1 mA vs. Temperature in Test Circuit,
Figure 1. (Circuit Lo_As_Tse_-3s_{0511 fig 14}
De-embedded)
0
-50
0
0
50
100
TEMPERATURE (°C)
Figure 15. AT-30533 Noise Figure and Associated Gain
at V_ce = 2.7 V, I_c = 1 mA vs. Temperature in Test Circuit,
Figure 1. (Circuit L^Aos^Ts^-e³s⁰ ­^{511 fig 15}
De-embedded)
-80
-9
-6
-3
0
3
6
POWER PER TONE (dBm)
Figure 16. AT-30511 and AT-30533 Intermodulation
Products vs. Output Power at V_ce = 2.7 V, I_c = 10 mA,
900 MHz with Optim_Aa_Tl_-T₃u₀n₅i₁n₁g._{fig 16}