HSMP-482B Datasheet, PDF (3/10 Pages) Broadcom Corporation. – Surface Mount RF PIN Switch and Limiter Diodes

Typical Parameters at T = 25°C (unless otherwise noted), Single Diode
C
100
100
10
1
0.1
0.01
0
125C 25C –50C
0.2 0.4 0.6 0.8
1.0 1.2
V_F – FORWARD VOLTAGE (mA)
Figure 1. Forward Current vs. Forward Voltage.
V_R = 2V
V_R = 5V
10
V_R = 10V
1
10
20
30
FORWARD CURRENT (mA)
Figure 2. Reverse Recovery Time vs. Forward
Current for Various Reverse Voltages.
100
10
1
0.1
0.01
0.1
1
10
100
I_F – FORWARD BIAS CURRENT (mA)
Figure 3. RF Resistance at 25C vs. Forward Bias
Current.
1.4
1.2
1.0
0.8
0.6
0
10
20
30
40 50
V_R – REVERSE VOLTAGE (V)
Figure 4. Capacitance vs. Reverse Voltage.
120
Diode Mounted as a
115
Series Attenuator in a
50 Ohm Microstrip and
Tested at 123 MHz
110
105
100
95
90
85
1
10
30
I_F – FORWARD BIAS CURRENT (mA)
Figure 5. 2nd Harmonic Input Intercept Point vs.
Forward Bias Current.
30
25
1.5 GHz
20
15
1.0 GHz
10
5
Measured with external
bias return
0
0 5 10 15 20 25 30 35 40
CW POWER IN (dBm)
Figure 6. Large Signal Transfer Curve of the
HSMP-482x Limiter.
Typical Applications for Multiple Diode Products
RF COMMON
RF COMMON
RF 1
BIAS 1
RF 2
BIAS 2
Figure 7. Simple SPDT Switch, Using Only Positive Current.
RF 1
BIAS
Figure 8. High Isolation SPDT Switch, Dual Bias.
RF 2
BIAS
3