HSMP-3833 Datasheet, PDF (3/7 Pages) Broadcom Corporation. – Surface Mount RF PIN Diodes

Typical Parameters at T_C = 25°C (unless otherwise noted), Single Diode
100
0.35
10
1
0.1
0.01
0
125C 25C –50C
0.2 0.4 0.6 0.8
1.0 1.2
V_F – FORWARD VOLTAGE (mA)
Figure 1. Forward Current vs. Forward Voltage.
0.30
1 MHz
0.25
100 MHz
0.20 _{1 GHz}
0.15
0 2 4 6 8 10 12 14 16 18 20
REVERSE VOLTAGE (V)
Figure 2. RF Capacitance vs. Reverse Bias.
1000
100
10
1
0.1
0.01
0.1
1
10
100
I_F – FORWARD BIAS CURRENT (mA)
Figure 3. RF Resistance at 25C vs. Forward Bias Current.
120
Diode Mounted as a
110 ^{Series Attenuator}
in a 50 Ohm Microstrip
100 and Tested at 123 MHz
90
80
70
60
50
40
1000
100
10
DIODE RF RESISTANCE ()
Figure 4. 2nd Harmonic Input Intercept Point vs.
Diode RF Resistance for Attenuators.
120
Diode Mounted as a
115
Series Attenuator in a
50 Ohm Microstrip and
Tested at 123 MHz
110
105
100
95
90
85
1
10
30
I_F – FORWARD BIAS CURRENT (mA)
Figure 5. 2nd Harmonic Input Intercept Point vs.
Forward Bias Current for Switches.
1000
HSMP-3830
100
V_R = 5V
V_R = 10V
V_R = 20V
10
10
20
30
FORWARD CURRENT (mA)
Figure 6. Reverse Recovery Time vs. Forward Current
for Various Reverse Voltage.