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HSMS-2824 Datasheet, PDF (2/15 Pages) Broadcom Corporation. – Surface Mount RF Schottky Barrier Diodes
Pin Connections and Package Marking
1
6
2
5
Notes:
3
4 1. Package marking provides orientation and identification.
2. See “Electrical Specifications” for appropriate package marking.
Absolute Maximum Ratings[1] TC = 25°C
Symbol Parameter
Unit
SOT-23/SOT-143 SOT-323/SOT-363
If
Forward Current (1 µs Pulse) Amp
1
1
PIV
Peak Inverse Voltage
V
15
15
Tj
Junction Temperature
°C
150
150
Tstg
Storage Temperature
°C
-65 to 150
-65 to 150
θjc
Thermal Resistance[2]
°C/W
500
150
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. TC = +25°C, where TC is defined to be the temperature at the package pins where contact is made to the circuit board.
Electrical Specifications TC = 25°C, Single Diode[3]
Part
Package
Number Marking Lead
HSMS[4] Code
Code Configuration
2820 C0
0
Single
2822 C2
2
Series
2823 C3
3
Common Anode
2824 C4
4
Common Cathode
2825 C5
5
Unconnected Pair
2827 C7
7
Ring Quad[4]
2828 C8
8
Bridge Quad[4]
2829 C9
9
Cross-over Quad
282B C0
B
Single
282C C2
C
Series
282E C3
E
Common Anode
282F C4
F
Common Cathode
282K CK
K
High Isolation
Unconnected Pair
282L CL
L
Unconnected Trio
282M HH
M
Common Cathode Quad
282N NN
N
Common Anode Quad
282P CP
P
Bridge Quad
282R OO
R
Ring Quad
Test Conditions
Minimum
Breakdown
Voltage
VBR (V)
15
Maximum
Forward
Voltage
VF (mV)
340
IR = 100 mA IF = 1 mA[1]
Maximum
Forward
Voltage
VF(V) @
IF (mA)
0.5  10
Maximum
Reverse
Leakage
IR (nA) @
VR (V)
100  1
Notes:
1. ∆VF for diodes in pairs and quads in 15 mV maximum at 1 mA.
2. ∆CTO for diodes in pairs and quads is 0.2 pF maximum.
3. Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA.
4. See section titled “Quad Capacitance.”
5. RD = RS + 5.2Ω at 25°C and If = 5 mA.
Maximum
Capacitance
CT (pF)
1.0
VR = 0V[2]
f = 1 MHz
Typical
Dynamic
Resistance
RD (Ω) [5]
12
IF = 5 mA
2