HSMS-280N Datasheet, PDF (2/10 Pages) Broadcom Corporation. – Surface Mount RF Schottky Barrier Diodes

Pin Connections and Package Marking, SOT-363
Notes:
1
6 1. Package marking provides orientation and identification.
2. See “Electrical Specifications” for appropriate package marking.
2
5
ESD WARNING:
Handling Precautions Should Be Taken To Avoid Static Discharge.
3
4
Absolute Maximum Ratings^[1] T_C = 25°C
Symbol
Parameter
I_f
Forward Current (1 μs Pulse)
P_IV
Peak Inverse Voltage
T_j
Junction Temperature
T_stg
Storage Temperature
T_jc
Thermal Resistance^[2]
Unit
SOT-23/SOT-143
SOT-323/SOT-363
Amp
1
1
V
Same as V_BR
°C
150
Same as V_BR
150
°C
-65 to 150
-65 to 150
°C/W
500
150
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. T_C = +25°C, where T_C is defined to be the temperature at the package pins where contact is made to the circuit board.
Electrical Specifications T_A = 25°C, Single Diode ^[3]
Part
Number
HSMS^[4]
2800
2802
2803
2804
2805
2808
280B
280C
280E
280F
Package
Marking
Code
A0
A2
A3
A4
A5
A8
A0
A2
A3
A4
280K
AK
280L
AL
280M
H
280N
N
280P
AP
280R
O
Test Conditions
Lead
Code Configuration
0 Single
Minimum
Breakdown
Voltage
V_BR (V)
2 Series
3 Common Anode
4 Common Cathode
5 Unconnected Pair
8 Bridge Quad^[4]
B Single
C Series
E Common Anode
70
F Common Cathode
K
High Isolation
Unconnected Pair
L Unconnected Trio
M Common Cathode Quad
N Common Anode Quad
P Bridge Quad
R Ring Quad
I_R = 10 mA
Maximum
Forward
Voltage
V_F (mV)
410
I_F = 1 mA
Maximum
Forward
Voltage
V_F (V) @ I_F (mA)
Maximum
Reverse
Leakage
I_R (nA) @ V_R (V)
1.0 @ 15
200 @ 50
Notes:
1. DV_F for diodes in pairs and quads in 15 mV maximum at 1 mA.
2. DC_TO for diodes in pairs and quads is 0.2 pF maximum.
3. Effective Carrier Lifetime (t) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA.
4. See section titled “Quad Capacitance.”
5. R_D = R_S + 5.2 Ω at 25°C and I_f = 5 mA.
Maximum
Capacitance
C_T (pF)
2.0
V_F = 0 V
f = 1 MHz
Typical
Dynamic
Resistance
R_D (Ω) ^[5]
35
I_F = 5 mA
2