DEMO-MGA-1X516 Datasheet, PDF (2/14 Pages) Broadcom Corporation. – High Gain, High Linearity, Active Bias,Low Noise Amplifier

MGA-13516 Absolute Maximum Rating ^[1]
Symbol
Vdd1
Vbias1
Vdd2
Vbias
Idd2
P_in,max
P_diss
T_j
T_STG
Parameter
Device Supply Voltage
Control Voltage
Device Voltage, RF output to ground
Control Voltage
Device Drain Current
CW RF Input Power (Vdd1 = 5.0V, Idd1=45mA)
Total Power Dissipation ^[3]
Junction Temperature
Storage Temperature
Units Absolute Max.
V
5.5
V
3.5
V
5.5
V
5.5
mA
150
dBm 20
W
1.30
°C
150
°C
-65 to 150
Thermal Resistance ^[1-3](V_dd1=V_dd2=V_bias=5V), θ_jc = 36 ^oC/W
Notes:
1. Operation of this device in excess of any of these limits may cause permanent damage.
2. Thermal resistance measured using Infra-Red Microscopy Technique.
3. Board temperature T_Bis 25 ^oC. Derate 28mW/ ^oCfor T_B>120 ^oC.
Product Consistency Distribution Charts^[4]
T_A = 25 °C, 900MHz, Vdd1=5V, Vdd2=5V, Vbias=5V, F_RF=900MHz, unless stated otherwise.
LSL
USL
LSL
USL
CPK = 3.26
CPK = 3.22
36 38 40 42 44 46 48 50
Figure 1. Idd1 distribution ; LSL=37mA , USL=53mA
52 54
LSL
USL
CPK = 4.40
70 80 90 100 110 120 130 140 150
Figure 2. Idd2 distribution ; LSL=75mA , USL=140mA
USL
CPK = 2.09
30.0 30.5 31.0 31.5 32.0 32.5 33.0 33.5 34.0
Figure 3. Gain distribution ; LSL=30.2dB , USL=33.8dB
.5
.6
.7
.8
.9
1
1.1 1.2
NF distribution ; USL=1dB
Notes::
4. Distribution data sample size is 500 samples taken from 3 different wafer lots. Future wafer allocated to this product may have nominal values
anywhere between the upper and lower limits. Circuit losses have not been de-embedded from actual measurements.