DEMO-HSMP-38X6 Datasheet, PDF (2/6 Pages) Broadcom Corporation. – Quad PIN Diode π Attenuator 300 kHz to 4 GHz in SOT 25 Package

Absolute Max Ratings ^[1], Tc = +25^oC
Symbol
Parameter
Unit
Abs Max
I_f
Forward Current (1 µs Pulse)
Amp
1
P_IV
Peak Inverse Voltage
V
100
T_j
Junction Temperature
°C
150
T_stg
Storage Temperature
°C
-60 to 150
q_lb
Thermal Resistance ^[2]
°C/W
167
P_In
Input Power ^[3]
W
1.0
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. Thermal Resistance is measured from junction to board using IR method.
3. The Max Input Power is tested using demoboard as shown in Figure 1 at the worst-case (highest attenuation) bias condition of V+=5V, Vc=0V.
Electrical Specifications, Tc = +25^oC (Each Diode)
Minimum
Breakdown
Voltage
V_BR (V)
100
Maximum
Total
Capacitance
C_T (pF)
0.35
Test
Conditions
V_R = V_BR Measure
I_R≤ 10uA
V_R = 50V
f = 1MHz
Note : Rs parameters are tested under AQL 1.0
Minimum
Resistance
at I_F = 0.01mA,
R_H (Ω)
1500
I_F = 0.01mA
f = 100MHz
Maximum
Resistance
at I_F = 20mA,
R_L (Ω)
10
I_F = 20mA
f = 100MHz
Maximum
Resistance
at I_F = 100mA,
R_T (Ω)
3.0
I_F = 100mA
f = 100MHz
Resistance
at I_F = 1mA,
R_M (Ω)
45 to 80
I_F = 1mA
f = 100MHz
Typical Performance, Tc = +25^oC (Each Diode)
Test
Condition
Carrier Lifetime
t(ns)
1500
I_F = 50mA
I_R = 250 mA
Reverse Recovery Time
T_rr (ns)
300
V_R = 10 V
I_F = 20 mA
90% Recovery
Total Capacitance
C_T (pF)
0.27
V_R = 50V
f = 1MHz
Typical Performance for HSMP-3816 Quad PIN Diode π Attenuator @ +25^oC
Parameter
Test Condition
Units
Insertion Loss
Vc = 15V, V+ = 5V, Freq = 1GHz
dB
Return Loss
Vc = 0V, V+ = 5V, Freq = 1GHz
dB
Attenuation
Vc = 0V, V+ = 5V, Freq = 1GHz
dB
Input IP3
Vc = 1.5V, V+ = 5V, Freq = 1GHz
dBm
Input IP3
Vc = 15V, V+ = 5V, Freq = 1GHz
dBm
Input IP3
Vc = 1.5V, V+ = 5V, Freq = 100MHz
dBm
Input IP3
Vc = 15V, V+ = 5V, Freq = 100MHz
dBm
Input IP3
Vc = 1.5V, V+ = 5V, Freq = 30MHz
dBm
Input IP3
Vc = 15V, V+ = 5V, Freq = 30MHz
dBm
Notes :
1. Measurement above obtained using Wideband RF circuit design shown in Figure 1 & 2
Typical
-3.0
-22
38
45
42
37
37
35
35