DEMO-AVT-5X663 Datasheet, PDF (2/13 Pages) Broadcom Corporation. – DC – 6000 MHz InGaP HBT Gain Block

Absolute Maximum Rating^[1] T_A=25°C
Symbol
I_d
P_IN,MAX
P_DISS
T_OPT
T_J,MAX
T_STG
Parameter
Device Current
CW RF Input Power
Total Power Dissipation ^[3]
Operating Temperature
Junction Temperature
Storage Temperature
Units Absolute Max.
mA
70
dBm
15
mW
284
°C
-40 to 85
°C
150
°C
-65 to 150
Thermal Resistance
Thermal Resistance ^[2] θ_JB = 184°C/W
(I_d = 36 mA, T_C = 85°C)
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using Infrared
measurement technique.
3. Ground lead temperature is 25°C. Derate
5.5mW/°C for T_C >98°C.
Electrical Specifications ^[1]
T_A = 25°C, Zo = 50 Ω, V_CC = 5 V, R_bias = 30 Ω, P_in = -15 dBm (unless specified otherwise)
Symbol
Parameter and Test Condition
Frequency Units
Min.
Typ.
Max.
I_d
Device Current
mA
33.0
36.4
40.0
Gp
Power Gain
900 MHz
dB
2000 MHz
21.7
18.0
19.6
21.0
OIP3 ^[2]
Output 3rd Intercept Point
900 MHz
dBm
25.8
2000 MHz
24.0
25.1
S11
Input Return Loss, 50Ω source
900 MHz
dB
2000 MHz
-14.8
-10.8
S22
Output Return Loss, 50Ω load
900MHz
dB
2000 MHz
-14.9
-11.8
S12
Reverse Isolation
900 MHz
dB
2000 MHz
-24.1
-24.6
P1dB
Output Power at 1dB Gain Compression 900 MHz
dBm
13.3
2000 MHz
12.9
NF
Noise Figure
900 MHz
dB
2.8
2000 MHz
3.2
Notes:
1. Measurements obtained on CPWG line with reference plane at the ends of DUT leads (as shown in Figure 1).
2. OIP3 test condition: F_RF1 - F_RF2 = 10MHz with input power of -23 dBm per tone measured at worse side band.
2