DEMO-ATF3616-3 Datasheet, PDF (2/10 Pages) Broadcom Corporation. – 1.5–18 GHz Surface Mount Pseudomorphic HEMT

ATF-36163 Absolute Maximum Ratings^[1]

Symbol
Parameter
Units
V_DS
V_GS
V_GD
I_D
P_T
P_{in max}
T_CH
T_STG
Drain - Source Voltage
Gate - Source Voltage
Gate Drain Voltage
Drain Current
Total Power Dissipation
RF Input Power
Channel Temperature
Storage Temperature
V
V
V
mA
mW
dBm
°C
°C
Absolute
Maximum
+3
-3
-3.5
I_dss
180
+10
150
-65 to 150
Thermal Resistance:
θ_ch-c = 160°C/W
Note:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
ATF-36163 Electrical Specifications T_C = 25°C, Z_O = 50 Ω, V_ds = 1.5 V, I_ds = 10 mA, (unless otherwise noted).
Symbol
NF
G
g_m
I_dss
V_{p 10%}
BV_GDO
Parameters and Test Conditions
Noise Figure^[1]
f =12.0 GHz
Gain at NF^[1]
f = 12.0 GHz
Transconductance
V_DS = 1.5 V, V_GS = 0 V
Saturated Drain Current
V_DS = 1.5 V, V_GS = 0 V
Pinchoff Voltage
V_DS = 1.5 V, I_DS = 10% of I_dss
Gate Drain Breakdown Voltage
I_G = 30 µA
Units Min. Typ.
dB
1.2
dB
9
10
mS
50
60
mA
15
25
V
-1.0 -0.35
V
Note:
1. Measured in a test circuit tuned for a typical device.
Max.
1.4^[1]
40
-0.15
- 3.5
ATF-36163 Typical Parameters T_C = 25°C, Z_O = 50 Ω, V_ds = 2 V, I_ds = 15 mA, (unless otherwise noted).
Symbol
Parameters and Test Conditions Units
Typ.
F_min
Minimum Noise Figure (Γ_source = Γ_opt)

f = 4 GHz
f = 12 GHz
dB
0.6
dB
1.0
G_a
Associated Gain

f = 4 GHz
f = 12 GHz
dB
15.8
dB
9.4
G_max
Maximum Available Gain^[1]

f = 4 GHz
f = 12 GHz
dB
17.2
dB
10.9
P_1dB

Output Power at 1 dB Gain Compression
under the power matched condition
f = 4 GHz
f = 12 GHz
dBm
5
dBm
5
V_GS
Gate to Source Voltage for I_DS = 15 mA
V_DS = 2.0 V
V
- 0.2
Note:
1. Gmax = MAG for K > 1 and Gmax = MSG for K ≤ 1, which is shown on the S-parameters tables.