DEMO-ALM-31X22 Datasheet, PDF (2/12 Pages) Broadcom Corporation. – 1-Watt High Linearity Amplifier

Absolute Maximum Rating ^[2] T_A=25°C
Symbol
V_{dd, max}
I_{ds, max}
V_ctrl,max
P_in,max
P_diss
T_j,max
T_STG
Parameter
Device Voltage, RF output to ground
Device Drain Current
Control Voltage
CW RF Input Power
Total Power Dissipation ^[4]
Junction Temperature
Storage Temperature
Product Consistency Distribution Charts^{[5, 6]}
CPK = 2.22
Std Dev = 7
Units Absolute Max.
V
5.5
mA 750
V
5.5
dBm 25
W
4.125
o_C
150
o_C
-65 to 150
Thermal Resistance ^[3] θ_jc = 22 °C/W
(Vdd = 5V, Idd = 400mA, Tc = 85 °C)
Notes:
2. Operation of this device in excess of any of
these limits may cause permanent damage.
3. Thermal resistance measured using Infra-Red
measurement technique.
4. Board (bottom of the device) temperature TB
is 25 °C. Derate 45.7mW/ °C for Tc > 59.3 °C.
CPK = 4.29
Std Dev = 0.208
.34
.36
.38
.40
.42
.44
Figure 1. Ids; LSL = 340mA, nominal = 394mA, USL = 440mA
CPK = 5.73
Std Dev = 0.097
44
46
48
50
52
Figure 2. OIP3; LSL = 45dBm, nominal = 47.6dBm
Std Dev = 0.65
30
30.5
31
31.5
32 32.5
33
40
45
50
55
60
Figure 3. P1dB; LSL = 30dBm, nominal = 31.6dBm
Figure 4. PAE at P1dB; nominal = 52.5%
CPK = 4.21
Std Dev = 0.133
13.5 14 14.5 15 15.5 16 16.5 17 17.5
Figure 5. Gain; LSL=13.7dB, Nominal = 15.6dB, USL=17.3dB
2
Notes:
5. Distribution data sample size is 500 samples taken from 3 different
wafers. T_A = 25°C, Vdd = 5V, Vctrl = 5V, RF performance at 900MHz
unless otherwise specified. Future wafers allocated to this product
may have nominal values anywhere between the upper and lower
limits.
6. Measurements are made on a production test board. Input trace
losses have not been de-embedded from actual measurements.